Growth of topological insulator Bi_2Te_3 ultrathin films on Si(111) investigated by low-energy electron microscopy

Liu H.W.; Yuan H.T.; Fukui N.; Zhang L.; Jia J.F.; Iwasa Y.; Chen M.W.; Hashizume T.; Sakurai T.; Xue Q.K.

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Growth of topological insulator Bi_2Te_3 ultrathin films on Si(111) investigated by low-energy electron microscopy

机译：低能电子显微镜研究Si（111）上拓扑绝缘体Bi_2Te_3超薄膜的生长

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The molecular beam epitaxy growth of topological insulator Bi _2Te_3 thin films on Si(111) substrates has been investigated in situ by low-energy electron microscopy. The crystal structure and surface morphology during growth were directly revealed, which enables us to identify the optimal growth conditions for single crystalline Bi _2Te_3 films. The formation of thin films is preceded by several surface structures, including a wetting layer and a Te/Bi-terminated Si(111)-1× 1 reconstruction. Raman scattering spectra and AFM measurements indicate that, under Te-rich conditions, single crystalline films of Bi _2Te_3 grow along the [111] direction in a layer-by-layer mode. Transport measurements prove the insulating behavior of the films grown in this way.

机译：通过低能电子显微镜原位研究了Si（111）衬底上拓扑绝缘体Bi _2Te_3薄膜的分子束外延生长。直接揭示了生长过程中的晶体结构和表面形态，这使我们能够确定单晶Bi _2Te_3薄膜的最佳生长条件。在形成薄膜之前，先要采用几种表面结构，包括润湿层和Te / Bi端接的Si（111）-1×1重建结构。拉曼散射光谱和原子力显微镜测量表明，在富Te条件下，Bi _2Te_3的单晶膜沿[111]方向逐层生长。传输测量证明了以此方式生长的薄膜的绝缘性能。

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《Crystal growth & design》 |2010年第10期|共3页
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Liu H.W.; Yuan H.T.; Fukui N.; Zhang L.; Jia J.F.; Iwasa Y.; Chen M.W.; Hashizume T.; Sakurai T.; Xue Q.K.;
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1. Growth of topological insulator Bi_2Te_3 ultrathin films on Si(111) investigated by low-energy electron microscopy [J] . Liu H.W., Yuan H.T., Fukui N., Crystal growth & design . 2010,第10期

机译：低能电子显微镜研究Si（111）上拓扑绝缘体Bi_2Te_3超薄膜的生长
2. Atomic and Electronic Structure of Ultrathin Bi(lll) Films Grown on Bi_2Te_3(111) Substrates: Evidence for a Strain-Induced Topological Phase Transition [J] . T. Hirahara, N. Fukui, T. Shirasawa, Physical review letters . 2012,第22期

机译：Bi_2Te_3（111）衬底上生长的超薄Bi（III）薄膜的原子和电子结构：应变诱导的拓扑相变的证据。
3. Surface lattice vibration and electron-phonon interaction in topological insulator Bi_2Te_3 (111) films from first principles [J] . Huang G.Q. EPL . 2012,第1期

机译：基于第一原理的拓扑绝缘体Bi_2Te_3（111）膜中的表面晶格振动和电子-声子相互作用
4. Nucleation and Growth Dynamics of MBE-Grown Topological Insulator Bi_2Te_3 Films on Si (111) [C] . Svetlana Borisova, Julian Krumrain, Gregor Mussler, ICPS 2012 . 2013

机译：MBE-种植拓扑绝缘体BI_2TE_3薄膜的成核和生长动态（111）
5. The growth of epitaxial iron oxides on platinum (111) as studied by x-ray photoelectron diffraction, scanning tunneling microscopy, and low-energy electron diffraction. [D] . Kim, Yong-Joo. 1995

机译：通过X射线光电子衍射，扫描隧道显微镜和低能电子衍射研究了外延氧化铁在铂（111）上的生长。
6. Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate [O] . Liang-Zi Yao, Christian P. Crisostomo, Chun-Chen Yeh, -1

机译：Si（111）衬底上III-V型化合物的二维拓扑绝缘体薄膜的预计生长
7. Epitaxial growth of Bi2Se3 topological insulator thin films on Si (111) [O] . He, Liang, Xiu, Faxian, Wang, Yong, 2011

机译：Si（111）上Bi2Se3拓扑绝缘体薄膜的外延生长

Growth of topological insulator Bi_2Te_3 ultrathin films on Si(111) investigated by low-energy electron microscopy

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