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首页> 外文期刊>Crystal growth & design >Polytype transformation by replication of stacking faults formed by two-dimensional nucleation on spiral steps during SiC solution growth
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Polytype transformation by replication of stacking faults formed by two-dimensional nucleation on spiral steps during SiC solution growth

机译：在SiC溶液生长过程中，通过螺旋形台阶上二维成核形成的堆垛层错的复制进行多型转化

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Polytype transformations on the 4H-SiC(0001) Si face during top-seeded solution growth have been investigated by transmission electron microscopy and micro-Raman spectroscopy. 4H-, 15R-, and 6H-SiC were grown on the 4H-SiC(0001) Si face via spiral growth. Once a polytype transformation from 4H-SiC to 15R- or 6H-SiC occurs, the polytype rarely returns to 4H-SiC. Just before the polytype transformation, a disturbance in the stacking sequence involving the introduction of stacking faults was observed. A polytype transformation during spiral growth can be understood in terms of the replication of stacking faults due to two-dimensional nucleation of a single bilayer on the spiral steps. This polytype transformation model shows good agreement with observed polytype transformation pathways as well as the disturbance in the stacking sequence at the interface between 4H-SiC and 15R-SiC.
机译：通过透射电子显微镜和显微拉曼光谱研究了在顶晶溶液生长过程中4H-SiC（0001）Si面上的多型转变。通过螺旋生长在4H-SiC（0001）Si面上生长4H-，15R-和6H-SiC。一旦发生从4H-SiC到15R-或6H-SiC的多型转变，该多型很少返回4H-SiC。就在多型转换之前，就已经观察到涉及引入堆垛层错的堆垛层序扰动。螺旋形生长过程中的多型转化可以理解为是由于螺旋形台阶上单个双层的二维成核所引起的堆叠断层的复制。该多型转化模型与观察到的多型转化途径以及在4H-SiC和15R-SiC之间的界面堆积顺序中的扰动显示出良好的一致性。

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