...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Analog Integrated Circuits and Signal Processing >High-temperature characterisation and analysis of leakage-current-compensated, low-power bandgap temperature sensors
【24h】

High-temperature characterisation and analysis of leakage-current-compensated, low-power bandgap temperature sensors

机译：漏电流补偿，低功耗带隙温度传感器的高温表征及分析

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

This paper analyses leakage current compensation techniques for low-power, bandgap temperature sensors. Experiments are conducted for circuits that compensate for collector-substrate, collector-base, body-drain and source-body leakage currents in a Brokaw bandgap sensor. The sensors are characterised and their failure modes are analysed at temperatures from 60 to 230 degrees C. It is found that the most appropriate compensation circuit depends on the accuracy requirements of the application and on whether a stable reference voltage is required by other parts of the circuit. Experiments show that the power consumption is dominated by leakage current at high temperatures. One type of sensor was seen to consume 260 nW at 60 degrees C, 2: 1 mu W at 200 degrees C and 14 mu W at 230 degrees C. This work is motivated by the need to accurately monitor the temperature of power semiconductors in order to predict emerging faults in power semiconductor modules, a task for which cheap, single-chip, low-power, high-temperature, wireless bandgap temperature sensors are appropriate.
机译：本文分析了低功耗，带隙温度传感器的漏电流补偿技术。进行实验，用于补偿聚集体基板，集电器基，体漏和源体泄漏电流的电路。传感器的特征在于，并且它们的故障模式在60至230℃的温度下进行分析。发现最合适的补偿电路取决于应用的精度要求，以及是否需要稳定参考电压。其他部分是必需的电路。实验表明，功耗在高温下漏电流占据主导。观察到一种类型的传感器在60摄氏度下消耗260nw，在230℃下，2：1μmw为230℃。这项工作是为了准确地监测功率半导体的温度为了预测功率半导体模块中的出现故障，廉价，单芯片，低功耗，高温无线带隙温度传感器的任务是合适的。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号