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首页> 外文期刊>Advanced Science, Engineering and Medicine >Photoluminescence Emission from Si Nanocrystals in SiO_2 Matrix Obtained by Reactive Sputtering
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Photoluminescence Emission from Si Nanocrystals in SiO_2 Matrix Obtained by Reactive Sputtering

机译：反应溅射获得SiO_2基体中Si纳米晶体的光致发光

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摘要

Light emitting silicon rich silicon oxide samples (SiO_x with x<2) were prepared using reactive RF sputtering. By controlling the oxygen concentration of the Ar+O_2 mixture in the deposition chamber, an excess of silicon was created in the formed silicon oxide films. The compositions were obtained quantitatively by Rutherford Backscattering Spectroscopy (RBS). After performing a thermal annealing in temperatures of 1050 ℃ and 1100 0C, these samples showed a photoluminescence effect (PL), which was caused by the formation of silicon nanocrystals. The PL signal was observed in a broad band, extending from the visible to near infrared region of the spectrum, when the samples were excited with the 488 nm line of an argon laser. Transmission electron microscopy measurements show the presence of silicon nanocrystals. Significant improvement of the PL signal was achieved by subsequent thermal annealing at 450 ℃ in forming gas, which passivates the silicon nanocrystals interface. The values of refractive index were obtained by spectral ellipsometry, confirming qualitatively the RBS results. Two bands of photoluminescence emission were observed during the PL experiments and a variable laser power excitation was used to distinguish both emission peaks characteristics.
机译：使用反应性射频溅射制备了发光富硅氧化物样品（SiO_x，x <2）。通过控制沉积室中Ar + O_2混合物的氧浓度，在形成的氧化硅膜中产生了过量的硅。通过卢瑟福背散射光谱法（RBS）定量获得组合物。在1050℃和1100 0C的温度下进行热退火后，这些样品表现出光致发光效应（PL），这是由硅纳米晶体的形成引起的。当样品用氩激光的488 nm线激发时，在宽频带内观察到PL信号，从光谱的可见光延伸到近红外区。透射电子显微镜测量表明存在硅纳米晶体。通过随后在450℃下在形成气体中进行热退火，可以钝化硅纳米晶体的界面，从而显着改善了PL信号。折射率的值是通过光谱椭圆偏振法获得的，定性地证实了RBS结果。在PL实验期间观察到两个光致发光发射带，并使用可变激光功率激发来区分两个发射峰特征。

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