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首页> 外文期刊>Crystal Research and Technology: Journal of Experimental and Industrial Crystallography >Preparation of aluminosilicate crystalline coatings from sol-gel derived alumina films deposited on silicon/silica substrates
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Preparation of aluminosilicate crystalline coatings from sol-gel derived alumina films deposited on silicon/silica substrates

机译：由沉积在硅/二氧化硅基底上的溶胶-凝胶衍生的氧化铝膜制备硅铝酸盐晶体涂层

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摘要

The dedicated formation of crystalline coatings of the trimorphous aluminosilicates with the composition of Al2SiO5 starting from a low-cost sol-gel deposition of alumina thin films is reported. The influence of substrate type and film thickness on the crystallisation behaviour and film morphology is studied by means of wide-angle X-ray scattering (WAXS) and X-ray reflectometry (XR). When annealed at a temperature of 1150 degreesC under high-vacuum conditions, formation of the aimed phases was achieved only for films deposited on naturally oxidised Si-substrates covered with a thin silica layer (thickness is about 3 nm). In the case of films deposited on amorphous quartz glass and thermally oxidised Si-substrates covered with a thick silica layer (thickness is about 500 nm) no crystallisation occurred at this temperature. After annealing at the higher temperature of 1300 degreesC under high-vacuum conditions, in the films deposited on both kinds of Si-substrates mullite (ALSA) crystallises together with cristobalite NOD whereas the film deposited on the quartz glass substrate remains amorphous from viewpoint of WAXS.
机译：据报道，从氧化铝薄膜的低成本溶胶-凝胶沉积开始，形成具有Al2SiO5成分的三态铝硅酸盐晶体涂层。通过广角X射线散射（WAXS）和X射线反射法（XR）研究了衬底类型和膜厚度对结晶行为和膜形态的影响。当在高真空条件下在1150摄氏度的温度下退火时，仅在沉积在覆盖有薄二氧化硅层（厚度约为3 nm）的自然氧化的Si衬底上的膜上实现目标相的形成。在将膜沉积在非晶石英玻璃上并且用厚的二氧化硅层（厚度约为500 nm）覆盖的热氧化Si衬底上，在此温度下不会发生结晶。在高真空条件下于1300摄氏度的高温下退火后，两种硅衬底上沉积的膜中，莫来石（ALSA）与方石英NOD一起结晶，而从WAXS的角度来看，沉积在石英玻璃衬底上的膜仍保持非晶态。

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