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首页> 外文期刊>Crystal Research and Technology: Journal of Experimental and Industrial Crystallography >ON THE CONDUCTION MECHANISM AND THERMOELECTRIC PHENOMENA IN IN6S7 LAYER CRYSTALS
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ON THE CONDUCTION MECHANISM AND THERMOELECTRIC PHENOMENA IN IN6S7 LAYER CRYSTALS

机译：IN6S7层晶体的传导机理和热电现象

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摘要

In the present paper, measurements of the electrical conductivity and Hall coefficient on single crystal of In6S7, grown by a new crystal growth technique, were done. The crystal was found to be of n-type conductivity. The low conductivity sample showed as the most striking feature an exponential increase of the Hall mobility with temperature. This effect was explained by assuming a mixed conduction and different scattering mechanisms for electrons and holes in the same temperature range. Also we have made thermoelectric power measurements to support this assumption. An energy gap of 0.64 eV was found. [References: 13]
机译：在本文中，对通过新的晶体生长技术生长的In6S7单晶的电导率和霍尔系数进行了测量。发现该晶体具有n型导电性。低电导率样品最显着的特点是霍尔迁移率随温度呈指数增长。通过在相同温度范围内假设电子和空穴的混合传导和不同的散射机理来解释这种效应。我们也进行了热电功率测量以支持该假设。发现0.64eV的能隙。 [参考：13]

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