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首页> 外文期刊>Crystal Research and Technology: Journal of Experimental and Industrial Crystallography >Recharging processes of chromium ions in Cr:SrGdGa_3O_7 and Cr:SrLaGa_3O_7 single crystals
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Recharging processes of chromium ions in Cr:SrGdGa_3O_7 and Cr:SrLaGa_3O_7 single crystals

机译:Cr:SrGdGa_3O_7和Cr:SrLaGa_3O_7单晶中铬离子的充电过程

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摘要

Growth and recharging processes of chromium ions in SrGdGa_3O_7 and SrLaGa_3O_7 single crystals incorporated during growth or doping by diffusion (only for SrLaGa_3O_7 crystal) were analyzed. The annealing at 1000 °C in air and ionizing with gamma rays (doses from 10~3 to 10~5 Gy) and protons (10~14 cm~(-2) only for SrGdGa_3O_7 crystal) were performed. Different kinds of chromium ions valency, from two to four, were found. Electron spin resonance measurements in the temperature range 5-300 K with the use of Brucker spectrometer were also done.
机译:分析了在生长或通过扩散掺杂时掺入的SrGdGa_3O_7和SrLaGa_3O_7单晶中铬离子的生长和充电过程(仅对于SrLaGa_3O_7晶体)。在空气中于1000°C退火并用伽马射线(剂量范围从10〜3至10〜5 Gy)和质子(仅对于SrGdGa_3O_7晶体为10〜14 cm〜(-2))电离。发现了不同的铬离子化合价,从2到4。还使用Brucker光谱仪在5-300 K的温度范围内进行了电子自旋共振测量。

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