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首页> 外文期刊>Crystal Research and Technology: Journal of Experimental and Industrial Crystallography >Conversion of CuS thin films to structured nanosheet Cu_yS(1 < y ≦ 2) by vacuum annealing
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Conversion of CuS thin films to structured nanosheet Cu_yS(1 < y ≦ 2) by vacuum annealing

机译:通过真空退火将CuS薄膜转变为结构化纳米片Cu_yS(1

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摘要

In this study, large-area and uniform thickness novel nanosheet structured CuS thin films on ITO glass have been prepared by the one-step electrodeposition method from a dimethyl sulfoxide solution. Thin films of completely preserved nano-sheet like morphology of CuyS (y = 1.75, 1.8, 1.95, and 2.0) are grown by vacuum annealing CuS thin films at 500 ℃ for different lengths of time. The 500 ℃ sample heated for 10 hours was nearly converted to single phase of Cu2S with y ~ 2. The optical direct band gaps of nano-sheet CuyS thin films annealed at 500 ℃ of 2, 6, and 10 hours in vacuum were found to be 1.94, 1.68, and 1.44 eV, respectively.
机译:在这项研究中,通过一步电沉积法从二甲亚砜溶液中制备了大面积且厚度均匀的新型ITO玻璃上的纳米片状CuS薄膜。通过将CuS薄膜在500℃下真空退火不同的时间,可以生长出完全保留的纳米片状CuyS形貌的薄膜(y = 1.75、1.8、1.95和2.0)。加热10h的500℃样品几乎转变为y〜2的Cu2S单相。发现在500℃下退火2,6和10h的纳米片状CuyS薄膜的光学直接带隙为。分别为1.94、1.68和1.44 eV。

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