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首页> 外文期刊>Micron: The international research and review journal for microscopy >Electron beam damage of epoxy resin films studied by scanning transmission X-ray spectromicroscopy
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Electron beam damage of epoxy resin films studied by scanning transmission X-ray spectromicroscopy

机译：通过扫描透射X射线光谱研究的环氧树脂膜的电子束损伤

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摘要

Focused ion beam coupled with scanning electron microscopy (FIB-SEM) is a popular technique for advanced electron microscopy with applications such as, high-precision site-specific lamella sample preparation for transmission electron microscopy (TEM) and slice-and-view FIB 3-dimensional tomography. Damage caused by the electron imaging component of FIB-SEM may be compounded with damage from the ions during the ion milling process. There are known strategies for mitigating damage from ions and electrons (cryo-SEM, dose control, voltage control), but the electron damage on common embedding resins for EM has not been explored in detail beyond their resistance to shape-change. The relationship between beam parameters and damage mechanisms remains unclear. Since we are relying on the physical, chemical and thermal stability of embedded samples during ion-beam milling, it is important to distinguish electron beam damage from ion beam damage. Scanning transmission X-ray microscopy (STXM) has been used for analyzing the electron beam radiation damage on polymer films by characterizing the chemical bonding changes. In this paper, we focus on the effect of beam voltage and electron dose on electron beam damage to epoxy resin thin films. Irradiated areas on polymer thin films were characterized by near edge X-ray absorption fine structure (NEXAFS) in STXM. We found that, even when using low current and voltage, the electron beam can still cause noticeable chemical changes within the polymer film. The degree of electron beam damage depends not only on the beam energy, but also on the amount of inelastic scattering occurring within the material, as determined by the sample thickness.
机译：聚焦离子束与扫描电子显微镜（FIB-SEM）耦合是一种用于高级电子显微镜的普遍技术，具有诸如透射电子显微镜（TEM）和切片和视图FIB 3的高精度场所特异性薄片样品制剂等应用。 - 维度断层扫描。由离子铣削过程中的离子损伤，可以将由电子成像组分引起的损伤混合。有众所周知的策略，用于缓解离子和电子（Cryo-SEM，剂量控制，电压控制），但是对EM的常见嵌入树脂的电子损伤没有详细探讨其对形状变化的抵抗力。光束参数与损坏机制之间的关系仍不清楚。由于我们在离子束铣削期间依靠嵌入式样品的物理，化学和热稳定性，因此将电子束损坏与离子束损坏区分是重要的。扫描变速器X射线显微镜（STXM）已被用于通过表征化学粘合变化来分析聚合物膜上的电子束辐射损伤。在本文中，我们专注于光束电压和电子剂量对电子束损伤对环氧树脂薄膜的影响。聚合物薄膜上的照射区域通过STXM中的近边缘X射线吸收细结构（NexaF）为特征。我们发现，即使在使用低电流和电压时，电子束也可以在聚合物膜内引起显着的化学变化。电子束损伤的程度不仅取决于光束能量，而且取决于材料内发生的非弹性散射量，如采样厚度所确定的。

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