The distribution of Ga and Sb impurities in Ge-Si crystals grown by the Bridgman method using a feeding rod

Azhdarov GK; Zeynalov ZM; Huseynli LA

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The distribution of Ga and Sb impurities in Ge-Si crystals grown by the Bridgman method using a feeding rod

机译：用馈电棒通过布里奇曼法生长的Ge-Si晶体中Ga和Sb杂质的分布

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Gallium- and antimony-doped Ge1 - x Si (x) crystals (0 a parts per thousand currency sign x a parts per thousand currency sign 0.25) have been grown by the improved Bridgman method using a silicon seed and a macrohomogeneous feeding Ge-Si rod of the corresponding composition. The impurity concentration profiles along the grown crystals were determined from Hall measurements. The mathematical problem of impurity distribution along two-component mixed crystals grown from a melt with uniform and graded composition is solved in the Pfann approximation and within the virtual-crystal model for the solid solution. It is shown that the experimental impurity distributions in Ge1 - x Si (x) crystals are described well by the data calculated on the assumption of linear change in the impurity segregation coefficient with the crystal composition.

机译：镓和锑掺杂的Ge1-x Si（x）晶体（0千分之一货币符号xa千分之一货币符号0.25）已经通过改进的Bridgman方法，使用硅晶种和均质的Ge-Si棒生长了的相应组成。从霍尔测量确定沿生长晶体的杂质浓度分布。在Pfann逼近中和在固溶体的虚拟晶体模型中，解决了从具有均匀且渐变组成的熔体生长的沿两组分混合晶体的杂质分布的数学问题。通过在假设杂质偏析系数随晶体组成线性变化的情况下计算出的数据，可以很好地描述Ge1-x Si（x）晶体中的实验杂质分布。

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《Crystallography reports》 |2009年第1期|共5页
作者
Azhdarov GK; Zeynalov ZM; Huseynli LA;
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正文语种 eng
中图分类晶体学;
关键词
SINGLE-CRYSTALS; CZOCHRALSKI GROWTH; VERTICAL BRIDGMAN; SEGREGATION; COMPONENTS; MELT;

机译：单晶;直颈生长;垂直布里奇曼;偏析;成分;熔体;

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1. The distribution of Ga and Sb impurities in Ge-Si crystals grown by the Bridgman method using a feeding rod [J] . Azhdarov GK, Zeynalov ZM, Huseynli LA Crystallography reports . 2009,第1期

机译：用馈电棒通过布里奇曼法生长的Ge-Si晶体中Ga和Sb杂质的分布
2. Modeling the distribution of Ga and Sb impurities in GeaEuro'Si single crystals grown by double feeding of the melt: Growth conditions for homogeneous single crystals [J] . Aghamaliyev Z. A., Islamzade E. M., Azhdarov G. Kh. Crystallography reports . 2016,第2期

机译：模拟通过双熔体进料生长的GeaEuro'Si单晶中Ga和Sb杂质的分布：均质单晶的生长条件
3. Distribution of aluminum and indium impurities in crystals of Ge-Si solid solutions grown from the melt [J] . Kyazimova VK, Zeynalov ZM, Zakhrabekova ZM, Crystallography reports . 2006,第Suppla1期

机译：熔体生长的Ge-Si固溶体晶体中铝和铟杂质的分布
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机译：微裂纹对在“福腾”卫星上无坩埚漂浮区熔化生长的InSb：Te单晶中杂质不均一性的影响
5. Solute redistribution and constitutional supercooling effects in vertical Bridgman grown indium gallium antimonide by accelerated crucible rotation technique. [D] . Vogel, K. Juliet. 2004

机译：垂直坩埚旋转加速坩埚技术在垂直布里奇曼生长的铟镓铟中的溶质再分布和组织过冷效果。
6. High-Quality GaSe Single Crystal Grown by the Bridgman Method [O] . Tao Wang, Jie Li, Qinghua Zhao, 2018

机译：布里奇曼法生长的高质量GaSe单晶
7. The bacterial identification and antimicrobial susceptibility testing are usually performed manually. Recently, the number of samples has increased and the need for automatification has grown. BioMerieux has investigated Vitek2 for this purpose. HUSLAB has assigned us to compare the identification and antimicrobial results with respect to routine methods and Vitek2. Furthermore, we evaluate test reactions, ESBL (Extended Spectrum Beta-Lactamase) production and the time what it takes to get results with Vitek2. In this study, we examined a total of 183 bacterial isolates including 76 ESBL-strains, 40 nonfermenting rods, 41 fastidious bacteria and 26 fresh clinical isolates. The results of routine methods were gathered from the patient database and following this, compared to the results given by Vitek2. Vitek2 correctly identified more than 96 f the ESBL-strains and fresh clinical isolates. The results of nonfermenting rods and fastidious bacteri a were 70 oncordant with those of the routine methods. Test reaction results of Api20E were 94 nd Api20NE 70 n concordance with Vitek2 results. Approximately 80 f all Vitek2 antimicrobial results and 90 f ESBL test results were correct. Compared to earlier studies, Vitek2 performed the tests faster than the routine methods. These results suggest that Vitek2 is capable of giving rapid and accurate results. However, nonfermenting rods and fastidious bacteria should be studied further. [O] . Järveläinen Marika, Roslund Iira, Silander Maarit 2006

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机译：用于分析Bridgman生长半导体晶体的改进蚀刻和蚀刻方法的测试和进一步开发，重点是铅 - 锡 - 碲化物

The distribution of Ga and Sb impurities in Ge-Si crystals grown by the Bridgman method using a feeding rod

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