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首页> 外文期刊>Crystallography reports >Influence of in situ Photoexcitation on Structure of Damaged Layer in GaAs (001) Substrates Implanted with Ar~(3+) Ions
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Influence of in situ Photoexcitation on Structure of Damaged Layer in GaAs (001) Substrates Implanted with Ar~(3+) Ions

机译：原位光激发对注入Ar〜（3+）离子的GaAs（001）衬底损伤层结构的影响

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摘要

The influence of photoexcitation on the formation of the defect structure in GaAs crystals implanted with 200 keV Ar~+ ions at doses of 1 * 10~(13), 3 * 10~(13), and 5 * 10~(13) cm(-2) has been studied by high-resolution X-ray diffractometry. It was found that photoexcitation gives rise to annihilation of radiation-induced Frenkel pairs, and, thus, decreases the residual concentration of radiation-induced point defects. It is established that amorphization of the damaged layer proceeds via the formation and growth of clusters of radiation-induced point defects. The vacancy- and interstitial-type clusters are spatially separated-the former are located closer to the crystal surface than the latter. Photoexcitation hinders cluster growth and stimulates diffusion of interstitial defects into the substrate depth.
机译：光激发对注入200 keV Ar〜+离子剂量为1 * 10〜（13），3 * 10〜（13）和5 * 10〜（13）cm的GaAs晶体中缺陷结构形成的影响（-2）已通过高分辨率X射线衍射法进行了研究。发现光激发引起辐射诱导的弗伦克尔对的an灭，因此降低了辐射诱导的点缺陷的残留浓度。已经确定，受损层的非晶化是通过辐射诱发的点缺陷簇的形成和生长来进行的。空位和间隙型簇在空间上是分开的，前者比后者更靠近晶体表面。光激发会阻碍团簇生长，并刺激间隙缺陷扩散到基板深度。

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