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首页> 外文期刊>Crystal Research and Technology: Journal of Experimental and Industrial Crystallography >Systematic study of epitaxy growth uniformity in a specific MOCVD reactor
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Systematic study of epitaxy growth uniformity in a specific MOCVD reactor

机译：对特定MOCVD反应器中外延生长均匀性的系统研究

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摘要

Gallium nitride (GaN) is a direct bandgap semiconductor widely used in bright light-emitting diodes (LEDs). Thin-film GaN is grown by metal-organic chemical vapour deposition(MOCVD) technique. Reliability, efficiency and durability of LEDs are influenced critically by the quality of GaN films. In this report, a systematic study has been performed to investigate and optimize the growth process. Fluid flow, heat transfer and chemical reactions are calculated for a specific close-coupled showerhead (CCS) MOCVD reactor. Influences of reactor dimensions and growth parameters have been examined after introducing the new conceptions of growth uniformity and growth efficiency. It is found that GaN growth rate is mainly affected by the concentration of(CH3)3Ga:NH3 on the susceptor, while growth uniformity is mainly influenced by the recirculating flows above the susceptor caused by natural convection. Effect of gas inlet temperature and the susceptor temperature over the growth rate can be explained by two competing mechanisms. High growth efficiency can be achieved by optimizing the reactor design.
机译：氮化镓（GaN）是一种直接带隙半导体，广泛用于明亮的发光二极管（LED）中。薄膜GaN是通过金属有机化学气相沉积（MOCVD）技术生长的。 GaN膜的质量严重影响LED的可靠性，效率和耐用性。在这份报告中，进行了系统的研究以调查和优化生长过程。计算了特定密闭喷头（CCS）MOCVD反应器的流体流量，传热和化学反应。在引入了生长均匀性和生长效率的新概念之后，已经检查了反应堆尺寸和生长参数的影响。发现GaN的生长速率主要受基座上（CH3）3Ga：NH3浓度的影响，而生长均匀性主要受自然对流引起的基座上方的循环流的影响。气体入口温度和基座温度对生长速率的影响可以通过两种竞争机制来解释。通过优化反应器设计可以实现高生长效率。

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