...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Crystal Research and Technology: Journal of Experimental and Industrial Crystallography >Characterization of Pr2O3 added metals/GaAs Schottky diodes using X-ray photoelectron spectroscopy
【24h】

Characterization of Pr2O3 added metals/GaAs Schottky diodes using X-ray photoelectron spectroscopy

机译：使用X射线光电子能谱表征添加Pr2O3的金属/ GaAs肖特基二极管

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In this research, the surface chemical structures of Pr_2O_3 doped Liquid Phase Epitaxy (LPE) layers were investigated by X-ray Photoelectron Spectroscopy (XPS). The bonding energies of these grown surfaces are studied under various adding conditions. The comparisons of these surface chemical structures were used to explain the evolutions of the grown surfaces with their effects on the Schottky barrier height. Because the surface states are lowered and the Fermi level is not pinned, these metals (Au, Ag, Ni, Pt)/GaAs Schottky structures all show an improved diode performance by adding Pr_2O_3. The resulting barrier height and ideality factor, as estimated by the current-voltage measurement, can be as high as 0.94±0.02 eV and as unitary as 1.03±0.01, respectively.
机译：通过X射线光电子能谱（XPS）研究了掺Pr_2O_3的液相外延（LPE）层的表面化学结构。在各种添加条件下研究了这些生长表面的键能。这些表面化学结构的比较用于解释生长表面的演变及其对肖特基势垒高度的影响。由于降低了表面态且未固定费米能级，因此这些金属（Au，Ag，Ni，Pt）/ GaAs肖特基结构通过添加Pr_2O_3均显示出改善的二极管性能。通过电流-电压测量估算得出的势垒高度和理想因数分别可以高达0.94±0.02 eV和1.03±0.01。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号