Growth of Ga (x) In1-x Sb solid solution single crystals by the Czochralski method

Kozhemyakin GN; Ruban RV; Rom MA; Golovkova ME

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Growth of Ga (x) In1-x Sb solid solution single crystals by the Czochralski method

机译：通过直拉法生长Ga（x）In1-x Sb固溶体单晶

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Ga (x) In1 - x Sb solid solution single crystals (x = 0.03-0.09) have been grown. The dislocation density and electrophysical parameters are measured. A technique for the growth Ga (x) In1 - x Sb single crystals by the Czochralski method with GaSb polycrystal feed is developed. The conditions for the growth Ga0.08In0.92Sb single crystals with a more homogeneous distribution of Ga along the bulk are determined.

机译：Ga（x）In1-x Sb固溶体单晶（x = 0.03-0.09）已生长。测量位错密度和电物理参数。开发了一种通过切克劳斯基方法和GaSb多晶进料来生长Ga（x）In1- x Sb单晶的技术。确定了生长Ga0.08In0.92Sb单晶的条件，其中Ga沿主体分布更均匀。

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《Crystallography reports》 |2009年第4期|共5页
作者
Kozhemyakin GN; Ruban RV; Rom MA; Golovkova ME;
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正文语种 eng
中图分类晶体学;
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机译：通过直拉法生长Ga（x）In1-x Sb固溶体单晶
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Growth of Ga (x) In1-x Sb solid solution single crystals by the Czochralski method

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