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首页> 外文期刊>Crystallography reports >Model approach to solving the inverse problem of X-ray reflectometry and its application to the study of the internal structure of hafnium oxide films
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Model approach to solving the inverse problem of X-ray reflectometry and its application to the study of the internal structure of hafnium oxide films

机译：解决X射线反射法反问题的模型方法及其在氧化ha薄膜内部结构研究中的应用

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摘要

The key features of the inverse problem of X-ray reflectometry (i.e., the reconstruction of the depth profile of the dielectric constant using an experimental angular dependence of reflectivity) are discussed and essential factors leading to the ambiguity of its solution are analyzed. A simple approach to studying the internal structure of HfO_2 films, which is based on the application of a physically reasonable model, is considered. The principles for constructing a film model and the criteria for choosing a minimal number of fitting parameters are discussed. It is shown that the ambiguity of the solution to the inverse problem is retained even for the simplest single-film models. Approaches allowing one to pick out the most realistic solution from several variants are discussed.
机译：讨论了X射线反射法反问题的关键特征（即，使用实验性的反射率角度关系重建介电常数的深度分布），并分析了导致其解法不明确的基本因素。考虑一种基于物理合理模型的研究HfO_2薄膜内部结构的简单方法。讨论了构建胶片模型的原理和选择最少数量的拟合参数的标准。结果表明，即使对于最简单的单膜模型，反问题解的歧义也得以保留。讨论了允许人们从多个变体中选择最现实的解决方案的方法。

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