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首页> 外文期刊>CrystEngComm >A low-temperature AlN interlayer to improve the quality of GaN epitaxial films grown on Si substrates
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A low-temperature AlN interlayer to improve the quality of GaN epitaxial films grown on Si substrates

机译：低温AlN中间层可提高在Si衬底上生长的GaN外延膜的质量

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摘要

The quality of GaN epitaxial films on Si substrates is significantly improved by employing a low-temperature AlN interlayer. The relationship between the AlN interlayer growth temperature and the quality of GaN epitaxial films is systematically investigated. As the AlN interlayer growth temperature increases from 700 to 1000 degrees C, the crystalline quality of the GaN epitaxial films is firstly improved and then deteriorated. The GaN epitaxial film with the AlN interlayer grown at 800 degrees C shows the best crystalline quality, which is characterized by X-ray rocking curves with minimum full-width at half-maximum values of 370 and 452 arcsec for GaN (0002) and GaN (10-12), respectively. Further investigation reveals the fact that the low growth temperature of the AlN interlayer weakens the diffusion of Ga atoms from the AlGaN buffer layer into the AlN interlayer, thereby maintaining the lattice mismatch between the AlN interlayer and the GaN layer. The lattice mismatch facilitates the growth of 3-dimensional GaN which reduces the dislocation density effectively. This work provides a significant insight into the growth mechanism of GaN epitaxial films on Si substrates, which is critical for the fabrication of GaN-based devices on Si substrates.
机译：通过采用低温AlN中间层，可以显着提高Si衬底上GaN外延膜的质量。系统研究了AlN层间生长温度与GaN外延膜质量之间的关系。随着AlN层间生长温度从700℃增加到1000℃，GaN外延膜的结晶质量首先得到改善，然后劣化。具有在800摄氏度下生长的AlN中间层的GaN外延膜显示出最佳的晶体质量，其特征是X射线摇摆曲线具有最小的全宽度，对于GaN（0002）和GaN的半最大值为370和452 arcsec （10-12）。进一步的研究表明，AlN中间层的低生长温度会削弱Ga原子从AlGaN缓冲层到AlN中间层的扩散，从而保持AlN中间层和GaN层之间的晶格失配。晶格失配促进了3维GaN的生长，这有效地降低了位错密度。这项工作提供了对Si衬底上GaN外延膜生长机制的重要见解，这对于在Si衬底上制造GaN基器件至关重要。

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