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首页> 外文期刊>Nano Energy >Piezo-phototronic effect on quantum well terahertz photodetector for continuously modulating wavelength
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Piezo-phototronic effect on quantum well terahertz photodetector for continuously modulating wavelength

机译：压电效果对量子阱太赫兹光电探测器，用于连续调制波长

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摘要

Piezo-phototronic effect is unique for effectively controlling semiconductor and photonic properties by strain-induced piezoelectric field. In this work, we theoretically explore piezo-phototronic effect on intersubband optical absorption of wurtzite-structured AlGaN/GaN quantum well by self-consistently solving eight-band kp Hamiltonian and Poisson equations. Intersubband transition is associated with the transition of two electronic states so it has longer wavelength due to lower transition energy. Strain can also effectively increase absorption wavelength in Al0.15Ga0.85N/GaN/Al0.05Ga0.95N quantum well by quantum Stark effect. For Al0.1Ga0.9N/GaN/Al0.05Ga0.95N quantum well, absorption wavelength decreases with increasing strain. Quantum efficiency can be sensitively controlled by strain. This study not only provides the theory models of piezo-phototronics of intersubband transition, but also offers the method for continuously controlling terahertz application by piezophototronic effect.
机译：压电反应效果是通过应变诱导的压电场有效控制半导体和光子性能的独特。在这项工作中，我们通过自我致力于解决八个带Kp Hamiltonian和泊松方程，从理论上探索了对Wurtzite结构的AlGaN / GaN量子井的Intersubband光学吸收的压电效果。基于两个电子状态的转换相关联，所以由于过渡能量较低，它具有更长的波长。菌株还可以通过量子颗粒效应有效地增加Al0.15Ga0.85N / Al0.05Ga0.95N量子的吸收波长。对于Al0.1Ga0.9N / GaN / Al0.05Ga0.95N量子孔，吸收波长随着菌株的增加而降低。量子效率可以通过应变敏感地控制。这项研究不仅提供了层间转换的压电频道学理论模型，还提供了通过压舒隆效应连续控制太赫兹应用的方法。

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  • 来源
    《Nano Energy》 |2019年第2019期|共9页
  • 作者

    Liu Nian; Hu Gongwei; Dan Minjiang; Liu Ruhao; Zhang Yaming; Li Lijie; Zhang Yan;

  • 作者单位

    Univ Elect Sci &

    Technol China Sch Optoelect Sci &

    Engn Sch Phys Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China Sch Optoelect Sci &

    Engn Sch Phys Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China Sch Optoelect Sci &

    Engn Sch Phys Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China Sch Optoelect Sci &

    Engn Sch Phys Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China Sch Optoelect Sci &

    Engn Sch Phys Chengdu 610054 Sichuan Peoples R China;

    Swansea Univ Coll Engn Multidisciplinary Nanotechnol Ctr Swansea SA1 8EN W Glam Wales;

    Univ Elect Sci &

    Technol China Sch Optoelect Sci &

    Engn Sch Phys Chengdu 610054 Sichuan Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 能源与动力工程;
  • 关键词

    Piezo-phototronic effect; GaN quantum well; Intersubband transition; Terahertz photodetector;

    机译：压电光反应效果;GaN量子阱;梭经管过渡;太赫兹光电探测器;

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