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Suppression of surface and Auger recombination by formation and control of radial junction in silicon microwire solar cells

机译:通过形成和控制硅微针太阳能电池径向结的抑制表面和螺旋钻重组

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摘要

Black silicon (b-Si) with nanotextures is a promising light-trapping scheme for potentially achieving high conversion efficiency at reduced manufacturing cost in crystalline- silicon solar cells. However, the inherently high aspect-ratio and tiny feature size of the nanostructures are subject to severe surface (large surface areas) and Auger recombination (worse doping profile). These will abate the cost values of b-Si since one has to adopt a comprise strategy of applying shallow nanotextures with antireflection and passivation layers. Here, we show that silicon microwire solar cells featuring well-defined radial junctions can extensively suppress both surface and Auger recombination by providing excellent all-around electrical field. The radially doped silicon micro-pillar devices even show an internal quantum efficiency as good as that of planar substrate and their measured minority carrier lifetimes become nearly independent of total surface area. A great reduction in short-circuit current density loss was further identified as the junction abruptly changed from a fully diffused to a core-shell configuration, manifesting the powerful effectiveness of radial p-n(+) junction on the suppression of Auger recombination. Furthermore, silicon microwire solar cell with a radial junction demonstrates 37% increase in efficiency compared with the reference cell, suggesting a feasible strategy towards high-efficiency solar devices.
机译:具有纳米纹章的黑色硅(B-Si)是一种有前途的光捕获方案,用于在晶体太阳能电池中降低制造成本下可能实现高转换效率。然而,纳米结构的固有高纵横比和微小特征尺寸受到严重的表面(大表面积)和螺旋钻重组(更糟糕的掺杂曲线)。这些将减轻B-Si的成本值,因为必须采用包括施加浅纳米音调与抗反射和钝化层的策略。在这里,我们表明,通过提供优异的全面电场,可以通过提供优异的全面电场,广泛地抑制具有明确定义的径向连接的硅微针太阳能电池。径向掺杂的硅微柱装置甚至表现出内部量子效率,如平面基材的良好,它们的测量少数载体寿命变得几乎独立于总表面积。短路电流密度损失的大大降低进一步识别,因为从完全扩散到核心壳配置突然改变的连接,表现出径向P-N(+)结对螺旋钻重组的强大有效性。此外,与参考电池相比,具有径向结的硅片微调太阳能电池显示出37%的效率提高,表明对高效太阳能器件的可行策略。

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  • 来源
    《Nano Energy》 |2019年第2019期|共8页
  • 作者单位

    Shanghai Jiao Tong Univ Sch Phys &

    Astron Inst Solar Energy 800 Dong Chuan Rd Shanghai 200240 Peoples R China;

    Shanghai Jiao Tong Univ Sch Phys &

    Astron Inst Solar Energy 800 Dong Chuan Rd Shanghai 200240 Peoples R China;

    Chinese Acad Sci Ningbo Inst Mat Technol &

    Engn Ningbo 315201 Zhejiang Peoples R China;

    Chinese Acad Sci Ningbo Inst Mat Technol &

    Engn Ningbo 315201 Zhejiang Peoples R China;

    Chinese Acad Sci Ningbo Inst Mat Technol &

    Engn Ningbo 315201 Zhejiang Peoples R China;

    Shanghai Jiao Tong Univ Sch Phys &

    Astron Inst Solar Energy 800 Dong Chuan Rd Shanghai 200240 Peoples R China;

    Chinese Acad Sci Ningbo Inst Mat Technol &

    Engn Ningbo 315201 Zhejiang Peoples R China;

    Chinese Acad Sci Ningbo Inst Mat Technol &

    Engn Ningbo 315201 Zhejiang Peoples R China;

    Shanghai Jiao Tong Univ Sch Phys &

    Astron Inst Solar Energy 800 Dong Chuan Rd Shanghai 200240 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 能源与动力工程;
  • 关键词

    Radial junction; Micropencil array; Surface recombination; Auger recombination; Black silicon solar cells;

    机译:径向结;微瓶装阵;表面复合;螺旋钻重组;黑色硅太阳能电池;

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