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首页> 外文期刊>Crystallography reports >Investigation of the Possibility of Obtaining Homogeneous Ga_(1-x)In_xSb Crystals under Weak Flow Conditions
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Investigation of the Possibility of Obtaining Homogeneous Ga_(1-x)In_xSb Crystals under Weak Flow Conditions

机译：在弱流条件下获得均质Ga_（1-x）In_xSb晶体的可能性的研究

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摘要

The possibility of growing macrohomogeneous Ga_(1-x)In_xSb crystals with x = 0.2 was studied using the axial heating process close to the melt/crystal interface. The grown ingots were analyzed by a JSM-5300 scanning electron microscope and the experimental results were compared with the results of numerical simulation. It was shown that, as a whole, the mathematical model adequately describes the processes of the steady-state heat and mass transfer. It was found that, at the crystallization of Ga_(1-x)In_xSb by the axial heating process under conditions of weak laminar flows, longitudinal homogeneity is observed when a dead zone is formed in the melt and that the crystallization regime is similar to diffusion. It was shown that the composition of the grown crystals strongly depends on the structure of a melt flow and its dynamics.
机译：使用靠近熔体/晶体界面的轴向加热过程，研究了生长x = 0.2的宏观均匀Ga_（1-x）In_xSb晶体的可能性。用JSM-5300型扫描电子显微镜对生长的铸锭进行了分析，并将实验结果与数值模拟结果进行了比较。结果表明，总体而言，数学模型充分描述了稳态传热和传质的过程。研究发现，在薄层流条件下，通过轴向加热过程Ga_（1-x）In_xSb的结晶过程中，当熔体中形成死区时，观察到纵向均匀性，且其结晶过程与扩散相似。 。结果表明，生长晶体的组成很大程度上取决于熔体流动的结构及其动力学。

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