...
首页> 外文期刊>Superconductor Science & Technology >High utilization ratio of metal organic sources for MOCVD-derived GdYBCO films based on a narrow channel reaction chamber
【24h】

High utilization ratio of metal organic sources for MOCVD-derived GdYBCO films based on a narrow channel reaction chamber

机译:基于窄通道反应室的MOCVD衍生的GDYBCO膜的金属有机源的高利用率

获取原文
获取原文并翻译 | 示例
           

摘要

A narrow channel reaction chamber is designed in our home-made MOCVD system and applied to deposit GdYBCO films on the template of LaMnO3/epitaxial MgO/IBAD-MgO/solution deposition planarization-Y2O3-buffered Hastelloy tapes. In the reaction chamber, metal organic sources are transferred from the inlet to the outlet along the direction of the tape movement. Thus, compared to the vertical injection way of metal organic sources, the residence time of metal organic sources on the surface of substrates would be extended through adopting the novel reaction chamber. Therefore, the utilization of metal organic sources, which is calculated according to the measured results of experiments, can reach 31%. Additionally, the utilization ratio of metal organic sources based on the novel reaction chamber is basically two times as much as that of the commonly used vertical injection slit shower. What is more, through adjusting the process, the critical current density of 300 nm thick GdYBCO film prepared the reel-to-reel way has reached 3.2 MA cm(-2) (77 K, 0 T).
机译:狭窄的通道反应室设计在我们自制的MOCVD系统中,并应用于在Lamno3 /外延MgO / IBAD-MgO /溶液沉积平面模板上的GDYBCO薄膜上沉积GDYBCO薄膜。在反应室中,金属有机源沿着胶带运动的方向从入口转移到出口。因此,与金属有机源的垂直注射方式相比,通过采用新的反应室,通过采用新的反应室来延伸金属有机源在基板表面上的停留时间。因此,根据实验结果计算的金属有机源的利用可以达到31%。另外,基于新型反应室的金属有机源的利用率基本上是常用的垂直喷射缝隙淋浴的两倍。更重要的是,通过调节该过程,300nm厚的GDYBCO薄膜的临界电流密度制备了卷轴到卷筒的方式达到3.2 mA cm(-2)(77k,0 t)。

著录项

  • 来源
  • 作者单位

    Univ Elect Sci &

    Technol China State Key Lab Elect Thin Films &

    Integrated Devic Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China State Key Lab Elect Thin Films &

    Integrated Devic Chengdu 610054 Sichuan Peoples R China;

    Southwest Jiaotong Univ Sch Phys Sci &

    Technol Chengdu 610031 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China State Key Lab Elect Thin Films &

    Integrated Devic Chengdu 610054 Sichuan Peoples R China;

    Shanghai Univ Sch Phys Shanghai 200444 Peoples R China;

    Shanghai Univ Sch Phys Shanghai 200444 Peoples R China;

    Univ Elect Sci &

    Technol China State Key Lab Elect Thin Films &

    Integrated Devic Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China State Key Lab Elect Thin Films &

    Integrated Devic Chengdu 610054 Sichuan Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 超导电性;导电材料及其制品;
  • 关键词

    narrow channel reaction chamber; MOCVD; GdYBCO; utilization ratio; critical current density;

    机译:窄沟道反应室;MOCVD;GDYBCO;利用率;临界电流密度;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号