Reversible phase transition in vanadium oxide films sputtered on metal substrates

Palai Debajyoti; Esther A. Carmel Mary; Porwal Deeksha; Pradeepkumar Maurya Sandeep; Kumar D. Raghavendra; Bera Parthasarathi; Sridhara N.; Dey Arjun

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Reversible phase transition in vanadium oxide films sputtered on metal substrates

机译：在金属基材上溅射氧化钒膜中的可逆相转变

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Vanadium oxide films, deposited on aluminium (Al), titanium (Ti) and tantalum (Ta) metal substrates by pulsed RF magnetron sputtering at a working pressure of 1.5x10(-2)mbar at room temperature are found to display mixed crystalline vanadium oxide phases viz., VO2, V2O3, V2O5. The films have been characterized by field-emission scanning electron microscopy, X-ray diffraction, differential scanning calorimetry (DSC) and X-ray photoelectron spectroscopy, and their thermo-optical and electrical properties have been investigated. Studies of the deposited films by DSC have revealed a reversible-phase transition found in the temperature range of 45-49 degrees C.

机译：发现在室温下在1.5×10（-2）毫巴的脉冲RF磁控管溅射铝（Al），钛（Ti），钽（Ta）金属基板上的氧化钒膜在室温下溅射显示混合结晶氧化钒阶段，VO2，V2O3，V2O5。薄膜的特征在于现场排放扫描电子显微镜，X射线衍射，差示扫描量热法（DSC）和X射线光电子能谱，并研究了它们的热光和电性能。 DSC的沉积膜的研究表明，在45-49℃的温度范围内发现可逆相转变。

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来源
《Philosophical Magazine Letters》 |2016年第12期|共7页
作者
Palai Debajyoti; Esther A. Carmel Mary; Porwal Deeksha; Pradeepkumar Maurya Sandeep; Kumar D. Raghavendra; Bera Parthasarathi; Sridhara N.; Dey Arjun;
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作者单位

ISRO Satellite Ctr Thermal Syst Grp Bangalore Karnataka India;

ISRO Satellite Ctr Thermal Syst Grp Bangalore Karnataka India;

ISRO Satellite Ctr Thermal Syst Grp Bangalore Karnataka India;

ISRO Satellite Ctr Thermal Syst Grp Bangalore Karnataka India;

ISRO Satellite Ctr Thermal Syst Grp Bangalore Karnataka India;

CSIR Natl Aerosp Labs Surface Engn Div Bangalore Karnataka India;

ISRO Satellite Ctr Thermal Syst Grp Bangalore Karnataka India;

ISRO Satellite Ctr Thermal Syst Grp Bangalore Karnataka India;

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原文格式 PDF
正文语种 eng
中图分类物理学;
关键词
Vanadium oxide; thin films; reversible-phase transition; XRD; XPS; thermo-optical properties; DSC;

机译：氧化钒;薄膜;可逆相转变;XRD;XPS;热敏性质;DSC;

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专利

1. Reversible phase transition in vanadium oxide films sputtered on metal substrates [J] . Palai Debajyoti, Esther A. Carmel Mary, Porwal Deeksha, Philosophical Magazine Letters . 2016,第10a12期

机译：在金属基材上溅射氧化钒膜中的可逆相转变
2. Fabrication of low phase transition temperature vanadium oxide films by direct current reactive magnetron sputtering and oxidation post-anneal method [J] . Qiao Ya, Chen Jie, Lu Yuan, Infrared physics and technology . 2014,第Null期

机译：直流反应磁控溅射和氧化后退火法制备低相变温度钒氧化物薄膜
3. Spin injection into vanadium dioxide films from a typical ferromagnetic metal, across the metal–insulator transition of the vanadium dioxide films [J] . Kazuma Tamura, Teruo Kanki, Shun Shirai, AIP Advances . 2021,第3期

机译：从典型的铁磁金属旋转进入二氧化钒膜，横跨二氧化钒膜的金属绝缘体转变
4. Electric Field Induced Metal-Insulator Transition of Vanadium Dioxide Films on Sapphire Substrate Prepared by Inductively Coupled Plasma-Assisted Sputtering [C] . Kunio Okimura, Yusuke Nihei, Yusuke Sasakawa IUMRS International Conference in Asia . 2007

机译：电场诱导通过电感耦合等离子体辅助溅射制备的蓝宝石衬底上的二氧化钒膜的金属绝缘体转变
5. Switching Applications Based on Reversible Insulator-Metal Transition of Vanadium Dioxide Thin Films Synthesized by Pulsed Laser Deposition. [D] . Wang, Yan. 2013

机译：基于脉冲激光沉积合成的二氧化钒薄膜的可逆绝缘体-金属跃迁的开关应用。
6. The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior [O] . Chunzi Zhang, Ozan Gunes, Yuanshi Li, 2019

机译：直流磁控溅射过程中衬底偏置对VO2薄膜质量及其绝缘体-金属过渡行为的影响
7. Controlling metal–insulator transitions in reactively sputtered vanadium sesquioxide thin films through structure and stoichiometry [O] . Einar B. Thorsteinsson, Seyedmohammad Shayestehaminzadeh, Arni S. Ingason, 2021

机译：通过结构和化学计量控制反应性溅射钒型薄膜中的金属绝缘体过渡

Reversible phase transition in vanadium oxide films sputtered on metal substrates

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