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首页> 外文期刊>Philosophical Magazine Letters >Temperature dependence of the stacking fault energy of glide set-dissociated dislocations in Si
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Temperature dependence of the stacking fault energy of glide set-dissociated dislocations in Si

机译：在Si中堆叠堆叠故障能量的温度依赖性

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Recently, it was found that the dissociation distance of glide set dislocations introduced in Si just below the melting temperature by laser shock peening LSP) is unusually wide Iwata et al. J. Jpn Inst. Met. Materi., 792015), 308-314). In order to distinguish whether or not this is to be attributed to uncorrelated motions of leading and trailing Shockley partials or the intrinsic temperature dependence of the stacking fault energy (SFE), dislocations introduced by LSP were annealed at 1350 degrees C, which should be high enough for the uncorrelated partials to assume the equilibrium correlated configuration. It was found that this unusual widening of a dissociated dislocation introduced by LSP is attributed to uncorrelated motions of Shockley partials. Following this conclusion, the temperature dependence of the intrinsic SFE of Si was determined on correlated dissociated dislocations up to near the melting temperature. The intrinsic SFE of Si shows only negligibly small temperature dependence from 400 degrees C up to near the melting temperature.
机译：最近，发现通过激光冲击喷枪LSP在熔化温度低于熔化温度下引入的滑动组位错的解离距离是异常宽的iwata等。 J. JPN Inst。见面。 Materi。，792015），308-314）。为了区分这一点是归因于引导和尾部震动的不相关的运动或堆叠故障能量（SFE）的内在温度依赖性，LSP引入的脱位在1350℃下退火，这应该高足以让不相关的部分以假设平衡相关配置。结果发现，LSP引入的解离错位的这种不寻常的扩大归因于震撼部分的不相关运动。在此结论之后，测定Si的固有SFE的温度依赖性在相关的解离脱位上测定，其达到熔点附近。 Si的固有SFE仅显示从400℃的疏忽较小的温度依赖性，直到熔融温度接近熔点。

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