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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >Effect of external electric field on multisubband electron mobility in n-V-shaped double quantum well HEMT structure
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Effect of external electric field on multisubband electron mobility in n-V-shaped double quantum well HEMT structure

机译：外电场对N-V形双量子阱HEMT结构的多管电子迁移率的影响

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摘要

In this work, we present theoretically the effect of external electric field F-e on low temperature multisubband electron mobility mu in V-shaped double quantum well (V-DQW) HEMT structure. We consider the impact of ionised impurity and alloy disorder scatterings for the calculation of mu. We show that, in the proposed structure, when F-e, is absent, there are two subbands occupied below the Fermi levels. However, as F-e increases, there is an alteration of the potential profile, which changes the energy levels and wave function distributions leading to variation of occupation of subband states, i.e. from double to single. During double subband occupancy, initially, mu enhances with F-e, attains a peak value and then decreases. Whereas, for F-e where the transition from double to single subband occupancy occurs, there is a sudden rise in mu due to the cease of inter-subband interaction. It is interesting to note that different structure parameters, e.g. well widths Ww, central barrier width B-C, doping concentrations N-D, alloy concentrations x(v) at the well edges of the V-DQW have a fascinating impact on mu. We show that increasing Ww, and B-C and decreasing N-D, and x(v) enhances mu.
机译：在这项工作中，我们在理论上大学上表现出外部电场F-E在V形双量子阱（V-DQW）HEMT结构中的低温多管电子迁移率MU的影响。我们考虑电离杂质和合金障碍散射对亩的影响。我们表明，在所提出的结构中，当不存在F-E时，在费米水平以下有两个子带。然而，随着F-E的增加，潜在的轮廓改变，其改变了导致子带状态占用的变化的能量水平和波函数分布，即从双倍到单个。在双子带占用期间，最初使用F-E的MU增强，达到峰值，然后降低。然而，对于发生从双向单个子带占用的转换的F-E，由于子区域间相互作用的停止，MU突然增加。值得注意的是，不同的结构参数，例如，宽度WW，中央屏障宽度B-C，掺杂浓度N-D，V-DQW的井边的合金浓度X（v）对MU具有迷人的影响。我们表明，增加的WW和B-C和降低N-D，以及X（V）增强了MU。

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