State equations and properties of various polymorphous modifications of silicon and germanium

Magomedov M. N.

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State equations and properties of various polymorphous modifications of silicon and germanium

机译：硅和锗各种多态性修饰的状态方程和性质

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The state equations and the pressure dependences of the lattice properties have been obtained for various polymorphous modifications of silicon and germanium using the Mie-Lennard-Jones pair interatomic potential and the Einstein crystal model. It is shown that the elastic-type interatomic potential gives the best results for the semiconductor phase and the plastic-type interatomic potential for the metalized phases whose potential well depth is significantly smaller. The pressure dependences of the lattice properties are calculated along isotherm 300 K and the jumps of the properties during the phase transition from the diamond structure to the beta-Sn phase are evaluated for both silicon and germanium. The calculated results agree well with the experimental data.

机译：已经使用MIE-LENNARD-JONES对网状局和爱因斯坦晶体模型获得了硅和锗的各种多态性修饰的状态方程和晶格性能的压力依赖性。结果表明，弹性型环状电位给出了半导体阶段的最佳效果和潜在井深度明显更小的金属化相的塑料型环状电位。沿其他温关300k计算晶格性能的压力依赖性，对硅和锗评估从金刚石结构到β-Sn相的相变期间的性质的跳跃。计算结果与实验数据很好。

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《Physics of the solid state》 |2017年第6期|共9页
作者
Magomedov M. N.;
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Russian Acad Sci Dagestan Sci Ctr Inst Geothermal Problems Pr Shamilya 39a Makhachkala 367030 Dagestan Russia;

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正文语种 eng
中图分类固体物理学;
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1. State equations and properties of various polymorphous modifications of silicon and germanium [J] . Magomedov M. N. Physics of the solid state . 2017,第6期

机译：硅和锗各种多态性修饰的状态方程和性质
2. Pulsed modification of germanium films on silicon, sapphire, and quartz substrates: Structure and optical properties [J] . Novikov H. A., Batalov R. I., Bayazitov R. M., Semiconductors . 2015,第6期

机译：硅，蓝宝石和石英衬底上锗膜的脉冲改性：结构和光学性质
3. Modifications of the optical and structural properties of hydrogenated amorphous silicon by alloying with germanium and carbon [J] . Dimova-Malinoska D., Tzolov M., Tzenov N., Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion . 1998,第3a4期

机译：通过锗和碳合金化改性氢化非晶硅的光学和结构性质
4. Influence of light-soaking treatment on the optoelectronic properties of polymorphous silicon thin films to be used in solar cells [C] . Alvarez-Macias C., n Mexico, Monroy B.M., IEEE Photovoltaic Specialists Conference . 2013

机译：均光处理对太阳能电池用多晶硅薄膜光电性能的影响
5. Structural and magnetothermal properties of compounds: ytterbium silicon germanium, samarium silicon germanium, europium monooxide, and europium tetroxide. [D] . Ahn, Kyunghan. 2007

机译：化合物的结构和磁热性质：硅锗，sa硅锗，一氧化euro和四氧化euro。
6. Fabrication of Microbolometer Arrays Based on Polymorphous Silicon–Germanium [O] . Ricardo Jimenez, Mario Moreno, Alfonso Torres, 2020

机译：基于多晶硅 - 锗的微血频仪阵列的制备
7. Fabrication of Microbolometer Arrays Based on Polymorphous Silicon–Germanium [O] . Ricardo Jimenez, Mario Moreno, Alfonso Torres, 2020

机译：基于多晶硅 - 锗的微血频仪阵列的制备
8. Properties of Ion-Implanted and Diffused Photodetectors of Germanium and Germanium-Silicon Alloys [R] . Mills, I. M. N. 1979

机译：锗和锗硅合金离子注入和扩散光电探测器的特性

State equations and properties of various polymorphous modifications of silicon and germanium

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