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首页> 外文期刊>Photonics and Nanostructures: Fundamentals and Applications >Investigations on transient regime of Ge2Sb2Te5-based vertical photodetector integrated with silicon-on-insulator waveguide
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Investigations on transient regime of Ge2Sb2Te5-based vertical photodetector integrated with silicon-on-insulator waveguide

机译：基于GE2SB2TE5的瞬态制度的研究与绝缘体上的垂直光电探测器集成

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摘要

In this study, we conducted finite difference time domain simulation investigations of the transient responses of silicon-on-insulator waveguide-based vertical photodetectors using the phase-change material Ge2Sb2Te5 (GST) as a sensing element on the Si core. The charge transport characteristics comprising the carrier and displacement current were comprehensively studied based on variations in the dimension, pulse width, and frequency by solving the drift-diffusion model under constant biased conditions. The dynamic behaviors of two stable GST phases comprising amorphous (aGST) and crystalline (cGST) were compared in terms of the peak amplitude, peak arrival time, and rate of change in the current for both phases. The cGST based device was much faster, with the lowest peak arrival time of 21.5 ps and rate of arrival of 56.5 mu A/ps at a wavelength of 1150 nm. The lowest value peak arrival time was 22 ps with a slope of 4 mu A/ps for the aGST based device at a wavelength of 1850 nm. The results showed that cGST is suitable for lower wavelengths whereas aGST is appropriate for higher wavelengths in the near-infrared operating range to obtain instant dynamic response, thereby allowing the production of a tunable photodetector with a phase-change material.
机译：在本研究中，我们使用相变材料Ge2sb2te5（GST）作为Si芯上的传感元件，进行了有限差分时域模拟研究硅 - 镶嵌波导的垂直光电探测器的瞬态响应。通过在恒定的偏置条件下求解漂移扩散模型，基于尺寸，脉冲宽度和频率的变化来综合研究包括载体和位移电流的电荷传输特性。在峰值幅度，峰到达时间和两个相对于电流的变化率的方面比较了包含非晶（AGST）和结晶（CGST）的两个稳定GST相的动态行为。基于CGST的装置更快，最低的峰值到达时间为21.5 ps，并且在1150nm波长的波长下到达速率为56.5 mu a / p。最低值峰值到达时间为22ps，其基于AGST的器件为1850nm的斜率为4μA/ ps。结果表明，CGST适用于较低波长，而AGST适用于近红外操作范围内的较高波长以获得瞬间动态响应，从而允许通过相变材料制造可调谐光电探测器。

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