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首页> 外文期刊>Photonics and Nanostructures: Fundamentals and Applications >Tailoring the optical field enhancement in Si-based structures covered by nanohole arrays in gold films for near-infrared photodetection
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Tailoring the optical field enhancement in Si-based structures covered by nanohole arrays in gold films for near-infrared photodetection

机译：在用于近红外光电探测的金膜中覆盖的基于Si的结构中的光学场增强

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摘要

We performed numerical simulations of plasmonic near-field enhancement in Si-based structures in near infrared region. Gold films perforated with periodic two-dimensional subwavelength hole arrays were used as the plasmonic couplers. The array periodicity was adjusted to excite the surface plasmon modes at the telecom wavelengths (between 1.3 and 1.55 mu m). The field intensity enhancement factor and its spectral position, as a function of hole diameter, demonstrate the maximum at which the Bloch plasmon polariton waves propagating along the Au-Si interface change by a localized surface plasmon mode. The maximum peak wavelength and field intensity enhancement are reached at d/a = 0.5, where d is the hole diameter and a is the array periodicity. An over 14 times field intensity enhancement was obtained at lambda = 1.54 mu m for d = 200 nm and a = 400 nm. We found that the localized surface plasmon mode is confined mainly under the Au regions along the diagonals of the square lattice of holes. The lateral field distribution for propagating modes has either a hexagonal or square shape, reflecting in-pane symmetry of the grating. For structures with largest holes, the anticrossing of localized mode with the propagating one was observed implying coupling between the modes and formation of a mixed near-field state. The information acquired from the study is valuable for feasible device applications.
机译：我们在近红外区域近基于SI的结构近场增强的数值模拟。用周期性二维亚波长孔阵列穿孔的金膜用作等离子体耦合器。调整阵列周期性以激发电信波长（1.3和1.55μm）处的表面等离子体模式。场强增强因子及其光谱位置作为孔直径的函数，证明了沿着局部表面等离子体模式沿着Au-Si界面的变化传播的Bloch等离子体波的最大值。在D / A = 0.5处达到最大峰值波长和场强增强，其中D是孔直径，A是阵列周期性。在Lambda =1.54μm的D = 200nm和a = 400nm处获得超过14次的场强增强。我们发现局部表面等离子体模式主要沿着孔的方晶晶格的对角线局限于Au区域。传播模式的横向场分布具有六边形或方形，反映了光栅的突果上对称性。对于具有最大孔的结构，观察到具有传播的局部化模式的抵抗暗示在混合近场状态之间的模式和形成之间的耦合。从该研究中获取的信息对于可行的设备应用是有价值的。

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