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首页> 外文期刊>Surface Engineering >Comparative study on structure and properties of ZnO thin films prepared by RF magnetron sputtering using pure metallic Zn target and ZnO ceramic target
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Comparative study on structure and properties of ZnO thin films prepared by RF magnetron sputtering using pure metallic Zn target and ZnO ceramic target

机译：用纯金属Zn靶法制备ZnO薄膜制备的ZnO薄膜结构与性能的比较研究和ZnO陶瓷靶

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In this work, ZnO thin films was deposited onto Si substrate by ablation of different sputtering targets (ZnO ceramic target and pure metallic Zn target) under different substrate temperatures from 300 degrees C to 600 degrees C with intervals of 100 degrees C, and the properties of ZnO thin films were analysed. The results showed that ZnO thin films had the c-axis preferred orientation and it also presented optimised properties owing to the reduction of thin film defects at a substrate temperature of 400 degrees C. By analysing data, it could also be seen that the performance of ZnO thin films fabricated using the ZnO ceramic target was better than that of ZnO thin films fabricated using the pure metallic Zn target. It was considered that the excellent properties of ZnO thin films fabricated using the ZnO ceramic target were attributed to the decrease in oxygen vacancies and the reduction of film defects.
机译：在这项工作中，通过在300℃至600℃的不同基板温度下烧蚀不同的溅射靶（ZnO陶瓷靶标和纯金属Zn靶，在100摄氏度的间隔和性质的间隔和性能下消融ZnO薄膜通过烧蚀于Si底物。 分析了ZnO薄膜。 结果表明，ZnO薄膜具有C轴优选的取向，并且由于在400℃的底物温度下减少薄膜缺陷而呈现优化的性能。通过分析数据，还可以看到性能 使用ZnO陶瓷靶制造的ZnO薄膜优于使用纯金属Zn靶制造的ZnO薄膜的薄膜。 据认为，使用ZnO陶瓷靶标制造的ZnO薄膜的优异性能归因于氧空位的降低和薄膜缺陷的减少。

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