INFLUENCE OF TEMPERATURE ON HIGH-FIELD INJECTION MODIFICATION OF MIS STRUCTURES WITH THERMAL SiO<sub>2</sub> FILMS DOPED WITH PHOSPHORUS

Dmitrii V. Andreev; Gennady G.  Bondarenko; Vladimir V.  Andreev; Vladimir M. Maslovsky; Alexander A.  Stolyarov

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INFLUENCE OF TEMPERATURE ON HIGH-FIELD INJECTION MODIFICATION OF MIS STRUCTURES WITH THERMAL SiO₂ FILMS DOPED WITH PHOSPHORUS

机译：温度对热SiO _{2 磷的高场喷射改性MIS结构的影响}

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The paper presents a study of the processes of electron trapping in metal-insulator-semiconductor (MIS) structures with gate dielectric based on silicone dioxide doped with phosphorus under high-field Fowler?Nordheim tunnel injection of electrons in a range of temperatures from 293 to 373 K. We have ascertained that the negative charge being trapped in phosphosilicate glass (PSG) consisted of two components with a different energy of the thermal ionization ΔE_(a1) = 0.2-0.3 eV and ΔE_(a2) = 1.0-1.2 eV. A part of the charge with a low energy of the thermal ionization virtually drain off at annealing temperature of 473 K for a period of time of 20 min and then the dielectric contains only the thermostable part of the negative charge that can be utilized to correct the threshold voltage of MIS transistors. We have ascertained that an implementation of the high-field tunnel injection of electrons for MIS structures with SO_(2)-PSG gate dielectric has raised not only density of negative charge trapped but also its thermostable component.

机译：本文介绍了基于高场馈送器下掺杂磷介质的金属 - 绝缘体 - 半导体（MIS）结构中的电子捕获过程的研究，在高场饲料下掺杂磷掺杂磷晶体晶体晶圆Δnoldheim隧道在一系列温度范围内注射电子。 373 K.我们已经确定了被困在磷酸硅酸盐玻璃（PSG）中被捕获的负电荷由热电电离ΔE_（A1）= 0.2-0.3eV和ΔE_（A2）= 1.0-1.2eV的不同能量的两个组分组成。具有低能量的电荷的一部分电离的低能量在20分钟的时间为473k的退火温度下几乎排出，然后电介质仅包含可用于校正的负电荷的热稳定部分MIS晶体管的阈值电压。我们已经确定了具有SO_（2）-PSG栅极电介质的MIS结构的高场隧道电子的实施的实施不仅捕获的负电荷的密度，而且是其热稳定部件。

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来源
《High Temperature Material Processes》 |2019年第4期|共10页
作者
Dmitrii V. Andreev; Gennady G. Bondarenko; Vladimir V. Andreev; Vladimir M. Maslovsky; Alexander A. Stolyarov;
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作者单位

N.E. Bauman Moscow State Technical University;

National Research University Higher School of Economics;

Bauman Moscow State Technical University;

Department of Micro- and Nanoelectronics Moscow Institute of Physics and Technology (State University);

N.E. Bauman Moscow State Technical University;

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正文语种 eng
中图分类计量学;
关键词
MIS structure; thin films; high fields; modification of gate dielectric; silicone dioxide; phosphosilicate glass;

机译：MIS结构;薄膜;高领域;栅极电介质的改变;硅氧烷二氧化物;磷酸硅酸盐玻璃;

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1. INFLUENCE OF TEMPERATURE ON HIGH-FIELD INJECTION MODIFICATION OF MIS STRUCTURES WITH THERMAL SiO₂ FILMS DOPED WITH PHOSPHORUS [J] . Dmitrii V. Andreev, Gennady G. Bondarenko, Vladimir V. Andreev, High Temperature Material Processes . 2019,第4期

机译：温度对热SiO _{2 磷的高场喷射改性MIS结构的影响}
2. Charge Effects in the Dielectric Films of MIS Structures under the Concurrent Influence of Radiation and High-Field Electron Injection [J] . Andreev D. V., Bondarenko G. G., Andreev V. V., Journal of surface investigation: x-ray, synchrotron and neutron techniques . 2020,第2期

机译：在辐射和高场电子注射的同时影响下，MIS结构介电薄膜的电荷效应
3. Simulation of charge processes in dielectric films of MIS structures at simultaneous influence by ionization and high-field injection of electrons [J] . Dmitrii V. Andreev, Gennady G. Bondarenko, Vladimir V. Andreev, Procedia Manufacturing . 2019,第186期

机译：通过电离和高场注射混墨结构在MIS结构介电膜中的电荷过程模拟
4. Simulation of charge processes in dielectric films of MIS structures at simultaneous influence by ionization and high-field injection of electrons [C] . Dmitrii V. Andreev, Gennady G. Bondarenko, Vladimir V. Andreev, International Conference on Physical and Numerical Simulation of Materials Processing . 2019

机译：通过电离和高场注射电离和高场注射混墨结构介电膜的电荷过程模拟
5. Opto-electronic study of phosphorus-doped n-type and hydrogen-doped p-type CVD diamond films. [D] . Haenen, Ken. 2002

机译：磷掺杂的n型和氢掺杂的p型CVD金刚石薄膜的光电研究。
6. Shift in room-temperature photoluminescence of low-fluence Si+-implanted SiO2 films subjected to rapid thermal annealing [O] . Ming-Yue Fu, Jen-Hwan Tsai, Cheng-Fu Yang, 2008

机译：快速注热退火后注入低通量Si +的SiO2薄膜在室温下的光致发光位移
7. Influence of the annealing temperature on the photoluminescence of Er-doped SiO thin films [O] . G. Wora Adeola, H. Rinnert, P. Miska, 2007

机译：退火温度对ER掺杂SiO薄膜光致发光的影响

INFLUENCE OF TEMPERATURE ON HIGH-FIELD INJECTION MODIFICATION OF MIS STRUCTURES WITH THERMAL SiO2 FILMS DOPED WITH PHOSPHORUS

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INFLUENCE OF TEMPERATURE ON HIGH-FIELD INJECTION MODIFICATION OF MIS STRUCTURES WITH THERMAL SiO₂ FILMS DOPED WITH PHOSPHORUS