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首页> 外文期刊>Journal of Mechanical Science and Technology >Numerical study on thermal stress cutting of silicon wafers using two-line laser beams
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Numerical study on thermal stress cutting of silicon wafers using two-line laser beams

机译：双线激光束硅晶片热应力切割的数值研究

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摘要

We propose a method of cleaving silicon wafers using two-line laser beams. The base principle is separating the silicon wafer using crack propagation caused by laser-induced thermal stress. Specifically, this method uses two-line laser beams parallel to the cutting line such that the movements of the laser beam along the cutting line can be omitted, which is necessary when using a point beam. To demonstrate the proposed method, 3D numerical analysis of a heat transfer and thermo-elasticity model was performed. Crack propagation was evaluated by comparing the stress intensity factor (SIF) at the crack tip with the fracture toughness of silicon, where crack propagation is assumed begin when the SIF exceeds the fracture toughness. The influences of laser power, line beam width, and distance between two laser beams were also investigated. The simulation results showed that the proposed method is appropriate for cleaving silicon wafers without any thermal damage.
机译：我们提出了一种使用双线激光束切割硅晶片的方法。 基础原理是使用激光诱导的热应力引起的裂纹传播分离硅晶片。 具体地，该方法使用平行于切割线的双线激光束，使得可以省略沿着切割线的激光束的运动，这是在使用点光束时是必要的。 为了证明所提出的方法，进行了传热和热弹性模型的3D数值分析。 通过将裂缝尖端处的应力强度因子（SIF）与硅的断裂韧性进行比较来评估裂纹繁殖，当SIF超过断裂韧性时，假设裂缝繁殖开始。 还研究了激光功率，线束宽度和两个激光束之间的距离的影响。 仿真结果表明，该方法适用于切割硅晶片而没有任何热损坏。

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