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首页> 外文期刊>Journal of Nanoelectronics and Optoelectronics >The Effect of Substrate Temperature on the Microstructure and Thermoelectric Properties of Pulsed Laser Deposited Cu2SnSe3 Thin Film
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The Effect of Substrate Temperature on the Microstructure and Thermoelectric Properties of Pulsed Laser Deposited Cu2SnSe3 Thin Film

机译：衬底温度对脉冲激光沉积Cu2SNSE3薄膜微结构和热电性能的影响

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摘要

Cu2SnSe3 is a potential candidate for a variety of applications which include thermoelectric, optoelectronic and solar energy. Many studies were carried out to investigate the thermoelectric properties of polycrystalline Cu2SnSe3 materials, but studies on thermoelectric properties of thin film Cu2SnSe3 have not been reported so far. Thin Cu2SnSe3 films were successfully deposited through pulsed laser deposition on silicon substrate under Ar pressure of 5 mTorr at substrate temperatures of 300, 350 and 400 degrees C. The crystalline phases of the thin film samples were studied by X-ray diffraction, which revealed the formation of Cu2SnSe3 monoclinic phase in all three samples. The obtained films were polycrystalline, have uniform thickness and coarse particle agglomerates on the surface. Atomic force microscopy analysis was performed to study the samples morphology and surface roughness. The as-deposited films were p-type with positive values of Seebeck coefficient, which was confirmed by the thermoelectric probe measurements. The sample deposited at 350 degrees C has the highest power factor of about 2.8*10(-4) (W/m(2)K), among the studied samples. The high power factor along with other benefits like higher energy density, light weight and compact size makes Cu2SnSe3 thin film potential candidate for various energy applications.
机译：CU2SNSE3是各种应用的潜在候选者，包括热电，光电和太阳能。进行了许多研究以研究多晶Cu2SNSE3材料的热电性能，但到目前为止还没有报道薄膜Cu2SNSe3的热电性能的研究。通过在300,350和400℃的底物温度下在5 mTorr的Ar压力下成功地沉积薄Cu2Snse3膜。通过X射线衍射研究薄膜样品的结晶相，X射线衍射研究在所有三个样品中形成Cu2SnSe3单斜相。所得薄膜是多晶的，表面上具有均匀的厚度和粗颗粒附聚物。进行原子力显微镜分析，以研究样品形态和表面粗糙度。沉积的薄膜是p型，具有塞贝克系数的正值，通过热电探针测量来确认。在350℃下沉积的样品具有约2.8×10（-4）（W / M（2）k）的最高功率因数，在研究中，在研究中。高功率因数以及其他益处，如更高的能量密度，重量轻，紧凑的尺寸，使得Cu2SNSE3薄膜电位候选各种能量应用。

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