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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Enhancing the properties of perovskite quantum dot light emitting devices through grid structures formed by trioctylphosphine oxide
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Enhancing the properties of perovskite quantum dot light emitting devices through grid structures formed by trioctylphosphine oxide

机译：通过三辛膦氧化物形成的栅格结构增强钙钛矿量子点发光器件的性质

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摘要

Surface engineering and doping are common methods used to enhance the emission properties of perovskite quantum dot light-emitting diodes (PeQLEDs), and more effective methods need to be developed. Here, we introduce a spin-coated trioctylphosphine oxide (TOPO) layer that spontaneously forms concave-convex micro grid structures between the hole-transport layer (TFB) and the CsPbBr(3)quantum dot (QD) layer. The unique concave-convex micro grid structures change with the concentration of TOPO solution and the type of solvent, which may be caused by the surface tension. Spectral measurements reveal that the TOPO layer passivates the surface defects between the perovskite QDs. The finite-difference-time-domain (FDTD) method proves that these concave-convex micro grid structures also increase light output from the quantum dot light-emitting diodes (QLEDs). As a result, green perovskite QD light emitting diodes (LEDs) of 514 nm with a Luminous Efficiency (LE) of 3975 cd m(-2), Current Efficiency (CE) of 18.8 cd A(-1)and External Quantum Efficiency (EQE) of 6.7% can be achieved, which are improved three-fold compared to the CsPbBr(3)QLEDs without the TOPO layer. Our work suggests that the micro grid structures of the TOPO layer provide a novel and facile way to enhance the performance of the perovskite QLEDs.
机译：表面工程和掺杂是用于增强钙钛矿量子点发光二极管（PEQLEDS）的排放性能的常用方法，并且需要开发更有效的方法。这里，我们引入旋涂的三乙基氧基氧化物（TOPO）层，其自发地形成在空穴传输层（TFB）和CSPBBR（3）量子点（QD）层之间的凹凸微栅结构。独特的凹凸微电网结构随着TOPO溶液的浓度和溶剂的类型而变化，这可能是由表面张力引起的。光谱测量揭示了Topo层钝化钙钛矿QD之间的表面缺陷。有限差分时域（FDTD）方法证明这些凹凸微电网结构还增加了从量子点发光二极管（QLED）的光输出。结果，具有3975cd m（-2）的发光效率（LE），电流效率（CE）为18.8cd A（-1）和外部量子效率（可以实现6.7％的EQE，与没有TOPO层的CSPBBR（3）QLED相比，这是改进的三倍。我们的作品表明，Topo层的微电网结构提供了一种新颖的和轻松的方式来增强Perovskite QLED的性能。

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