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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Ultrahigh photosensitivity and detectivity of hydrogen-treated TiO2 nanorod array/SiO2/Si heterojunction broadband photodetectors and its mechanism
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Ultrahigh photosensitivity and detectivity of hydrogen-treated TiO2 nanorod array/SiO2/Si heterojunction broadband photodetectors and its mechanism

机译：氢气处理TiO2纳米峰阵列/ SiO2 / Si异质结宽带光电探测器的超高升降光敏和探测

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摘要

It is demonstrated that hydrogen treatment as a simple, effective strategy can greatly improve the broadband photo-responsive performance of pristine TiO2 nanorod arrays (NRAs)/SiO2/n-Si heterojunctions. The hydrogen-treated TiO2 NRAs/SiO2/n-Si heterojunction shows a stable, repeatable and broadband photo response from 365 nm to 980 nm at 100 W cm(-2). The responsivity (R) of H:TiO2 NRAs/SiO2/n-Si approaches the ultrahigh value of 468 A W-1 and it has an outstanding detectivity (D*) of 1.96 x 10(14) cm Hz(1/2) W-1 and an excellent sensitivity (S) of 2.63 x 10(7) cm(2) W-1, in contrast to the values of R (10(-6)-10(-1) A W-1) or S (2 x 10(3) cm(2) W-1) from reported TiO2 nanofilm/TiO2 NRAs/n-Si(111) photodetectors, indicating a huge responsivity enhancement of up to 4-8 orders of magnitude. Additionally, the response and recovery time are extremely short (3.5-3.9 ms). The comprehensive characteristics make the device stand out among the previously reported 1D metal oxide nanostructure/Si based photodetectors. In fact, the R, S and D* values of the heterojunction are 2-4 orders of magnitude higher than those of some new 2D nanomaterials/Si based photodetectors. The excellent photo-responsive performance may be attributed to the energy band structure of the TiO2@TiO2-xHx core/shell structure, the interface effect of the TiO2@TiO2-xHx/Si heterojunction, etc. This research provides a new concept for the design of other metal oxide based heterojunction photodetectors.
机译：据证明，氢处理作为一种简单，有效的策略可以大大提高原始TiO2纳米仪阵列（NRAS）/ SiO2 / N-Si异质结的宽带光响应性能。氢处理的TiO2 NRAS / SiO 2 / N-Si异质结显示在100W cm（-2）的365nm至980nm的稳定，可重复和宽带照片响应。 H：TiO2 NRAS / SiO2 / N-Si的响应性（R）接近超高值468 A W-1，它具有1.96×10（14）cm Hz（1/2）的优异探测器（D *） W-1和优异的敏感性为2.63×10（7）厘米（2）W-1，与R（10（-6）-10（-1）A W-1）的值相反，或者S（2×10（3）厘米（2）W-1）来自报告的TiO2纳米膜/ TiO2 NRAS / N-Si（111）光电探测器，表明巨大的响应性增强高达4-8个级。此外，响应和恢复时间非常短（3.5-3.9毫秒）。综合特性使装置在先前报道的1D金属氧化物纳米结构/ Si基光电探测中脱颖而出。实际上，异质结的R，S和D *值高于基于一些新的2D纳米材料/ Si的光电探测器的2-4个数量级。优异的光响应性能可能归因于TiO2 @ TiO2-XHX核心/壳结构的能带结构，TiO2 @ TiO2-XHX / Si异质结等界面效应。该研究为此提供了新的概念基于金属氧化物的异质结光电探测器的设计。

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