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首页> 外文期刊>Journal of Materials Engineering and Performance >Sinterability of Silicon Carbide and Boron Carbide under Single-Mode Microwave Fields
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Sinterability of Silicon Carbide and Boron Carbide under Single-Mode Microwave Fields

机译：单模微波场下碳化硅和碳化硼的烧结性

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摘要

The feasibility of processing silicon carbide (SiC) and boron carbide (B4C) using a 2.45 GHz single-mode microwave system has been investigated. In order to determine the appropriate sintering conditions, samples were processed under various electric/magnetic (E/H) field ratios. Proportional 50%E/H-field ratios and 100%H-field conditions resulted in higher sample temperatures up to 1500 degrees C under equivalent microwave power. Sinterability was improved by adding B4C and carbon to SiC, but limited to a thin outer layer of the pellet. While partial densification was observed under all conditions, isolated regions of full densification in microwave-processed B4C samples were observed under 100%H-field mode. Microstructural analysis of microwave-processed SiC with and without additives indicated non-uniform sintering, while B4C showed evidence of relatively homogeneous microstructures.
机译：研究了使用2.45GHz单模微波系统处理碳化硅（SiC）和碳化硼（B4C）的可行性。 为了确定适当的烧结条件，在各种电/磁性（E / H）场比下处理样品。 比例50％E / H场比率和100％H场条件导致相同的微波功率高达1500摄氏度的更高样本温度。 通过将B4C和碳添加到SiC而且限于颗粒的薄外层来改善烧结性。 在所有条件下观察到部分致密化，在100％H场模式下观察到微波处理的B4C样品中全致密化的隔离区域。 微波加工SiC的微观结构分析，无添加剂表明不均匀烧结，而B4C显示出相对均匀的微观结构的证据。

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