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首页> 外文期刊>Journal of Materials Engineering and Performance >Bias Voltage-Dependent Impedance Spectroscopy Analysis of Hydrothermally Synthesized ZnS Nanoparticles
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Bias Voltage-Dependent Impedance Spectroscopy Analysis of Hydrothermally Synthesized ZnS Nanoparticles

机译：偏置电压依赖性阻抗光谱分析水热合成ZnS纳米粒子

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In this report, bias voltage-dependent dielectric and electron transport properties of ZnS nanoparticles were discussed. ZnS nanoparticles were synthesized by introducing a modified hydrothermal process. The powder XRD pattern indicates the phase purity, and field emission scanning electron microscope image demonstrates the morphology of the synthesized sample. The optical band gap energy ( E ~(g?)=?4.2 eV) from UV measurement explores semiconductor behavior of the synthesized material. The electrical properties were performed at room temperature using complex impedance spectroscopy (CIS) technique as a function of frequency (40?Hz-10?MHz) under different forward dc bias voltages (0-1?V). The CIS analysis demonstrates the contribution of bulk resistance in conduction mechanism and its dependency on forward dc bias voltages. The imaginary part of the impedance versus frequency curve exhibits the existence of relaxation peak which shifts with increasing dc forward bias voltages. The dc bias voltage-dependent ac and dc conductivity of the synthesized ZnS was studied on thin film structure. A possible hopping mechanism for electrical transport processes in the system was investigated. Finally, it is worth to mention that this analysis of bias voltage-dependent dielectric and transport properties of as-synthesized ZnS showed excellent properties for emerging energy applications.
机译：在本报告中，讨论了ZnS纳米颗粒的偏置电压依赖性电介质和电子传输性能。通过引入改性的水热法合成ZnS纳米颗粒。粉末XRD图案表示相纯度，并且场发射扫描电子显微镜图像表明合成样品的形态。光学带隙能量（E〜（g？）=Δ4.2eV）来自UV测量探讨了合成材料的半导体行为。使用复杂的阻抗光谱（CIS）技术在室温下在室温下进行电性能，作为在不同前向DC偏置电压（0-1≤V）下的频率（40·Hz-10？MHz）的函数。顺式分析证明了传导机制中散装电阻及其对正向直流偏置电压的依赖性的贡献。阻抗与频率曲线的虚部呈现出弛豫峰的存在，其随着DC正向偏置电压的增加而移动。在薄膜结构上研究了合成ZnS的DC偏置电压依赖性AC和DC电导率。研究了系统中电气运输过程的可能跳跃机构。最后，值得一提的是，对偏置ZnS的偏置电压依赖性介质和传输性能的这种分析显示出出现的能量应用的优异性能。

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