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首页> 外文期刊>Journal of Micromechanics and Microengineering >Design, fabrication, and characterization of a high-performance CMOS-compatible thermopile infrared detector with self-test function
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Design, fabrication, and characterization of a high-performance CMOS-compatible thermopile infrared detector with self-test function

机译：具有自测功能的高性能CMOS兼容热电堆红外探测器的设计，制造和表征

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摘要

This paper presents the design, fabrication and characterization of a CMOS-compatible thermopile infrared (IR) detector with self-test function based on XeF2 front-side dry etching. In order to achieve better performance, a heavily doped N/P-polysilicon is utilized to form thermocouples, and XeF(2 )front-side isotropic etching is adopted to release and thermal isolation. At the same time, a platinum heater on the absorption layer is designed to serve as a heat source to realize the self-test function of the thermopile IR detector. IR radiation sensing shows that the detector achieves relatively high responsivity of 160.03 V W-1 and detectivity of 9.75 x 10(7) cm . Hz(1/2) and a extremely short response time of 2.5 ms in air at room temperature. In addition, a self-test measurement is conducted and validated by applying a voltage to the heater. Compared with traditional methods for detecting thermopile performance, this method has obvious convenience and simplicity, which provides an effective way for performance monitoring of thermal-based devices.
机译：本文介绍了基于XEF2前侧干法蚀刻的自检功能的CMOS兼容热电器红外（IR）检测器的设计，制造和表征。为了达到更好的性能，一个重掺杂的N / P-多晶硅用于形成热电偶，和氟化氙（2）前侧各向同性蚀刻采用以释放和热隔离。同时，吸收层上的铂加热器被设计为用作热源，以实现热电疏水器IR检测器的自检功能。 IR辐射感测表明，检测器达到相对高的响应性160.03V W-1和9.75×10（7）厘米的探测器。 Hz（1/2）和室温空气中的极短响应时间为2.5ms。另外，通过向加热器施加电压来进行和验证自检测量。与检测热电堆效性能的传统方法相比，该方法具有明显的便利性和简单性，为热基器件的性能监测提供了一种有效的方法。

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