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首页> 外文期刊>Journal of Micromechanics and Microengineering >Optimization of photoresist development and DRIE processes to fabricate high aspect ratio Si structure in 5nm scale
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Optimization of photoresist development and DRIE processes to fabricate high aspect ratio Si structure in 5nm scale

机译：光致抗蚀剂显影的优化和DRIE工艺在5nm规模中制造高纵横比Si结构

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摘要

The fabrication of high aspect ratio (AR) Si structure with extremely small feature size is attracting more and more attention recently. In this work, a top-down scheme for fabricating nanostructures with 4.4nm line width and 40:1 AR has been proposed and demonstrated. This technique utilizes electron beam lithography for nano-scale patterning and deep reactive ion etching (DRIE) for pattern transfer. In this method, a special development strategy is discussed to improve the perpendicularity of the photoresist mask, and a novel nano-scale barrel is utilized as the testing structure for the DRIE process optimization. To study the critical dimension (CD) variation in the DRIE process, the geometric morphology of the obtained vertical barrels is simulated by an ion transport model. It is found that the asymmetrical lateral etching encroachment decreased the CD loss by 50%. Without using a hard mask, this technique is fully compatible with Si-based microelectronic processes. Therefore, after further study of geometric properties of the obtained nano structure, this proposed microelectronic-compatible approach sheds light on manufacturing 3D nano devices towards 5 nm scale and beyond.
机译：具有极小特征尺寸的高纵横比（AR）Si结构的制造是最近吸引了越来越多的关注。在这项工作中，已经提出并证明了用于制造具有4.4nm线宽和40：1 AR的纳米结构的自上而下的方案。该技术利用电子束光刻用于纳米级图案化和深反应离子蚀刻（DRIE）进行图案转移。在该方法中，讨论了特殊的发展策略以改善光致抗蚀剂掩模的垂直性，并且使用新型纳米尺寸筒作为DRIE过程优化的测试结构。为了研究Drie过程中的临界尺寸（CD）变化，通过离子传输模型模拟所获得的垂直筒的几何形态。发现不对称的横向蚀刻侵蚀降低了50％的CD损失。不使用硬掩模，该技术与基于SI的微电子工艺完全兼容。因此，在进一步研究所获得的纳米结构的几何特性之后，该提出的微电子兼容方法在制造3D纳米器件上朝向5 nm尺度和超越的情况下脱光。

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