Features of the Initial Growth Stages of ZnO Films on the Rhombohedral Plane of Sapphire

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Features of the Initial Growth Stages of ZnO Films on the Rhombohedral Plane of Sapphire

机译：蓝宝石菱面板初期初期生长阶段的特征

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The initial growth stages of (1120) ZnO films on the rhombohedral plane of sapphire are studied. Grains of parasitic orientations are found to form at early growth stages. The pre-growth annealing of sapphire substrates at temperatures above 1000 degrees C results in suppression of the growth of these grains. The presence of round and polygonal grains in (1120) ZnO films is explained from the standpoint of the clustergrowth mechanism.

机译：研究了蓝宝石的菱形平面上（1120）ZnO膜的初始生长阶段。发现寄生取向颗粒在早期生长阶段形成。在高于1000℃的温度下的蓝宝石底物的预生长退火导致抑制这些晶粒的生长。（1120）ZnO膜中的圆形和多边形颗粒的存在是从簇生生长机制的观点解释的。

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《Journal of surface investigation: x-ray, synchrotron and neutron techniques》 |2019年第6期|共5页
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正文语种 eng
中图分类原子核物理学、高能物理学;
关键词
zinc oxide; film; microscopy; spreading resistance;

机译：氧化锌;薄膜;显微镜;散布抗性;

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1. Features of the Initial Growth Stages of ZnO Films on the Rhombohedral Plane of Sapphire [J] . Journal of surface investigation: x-ray, synchrotron and neutron techniques . 2019,第6期

机译：蓝宝石菱面板初期初期生长阶段的特征
2. Morphology evolution of a-plane ZnO films on r-plane sapphire with growth by pulsed laser deposition [J] . Chun-Yen Peng, Jr-Sheng Tian, Wei-Lin Wang, Applied Surface Science . 2013,第JANa15期

机译：r面蓝宝石上a面ZnO薄膜的形貌演化以及脉冲激光沉积的生长
3. Growth of p-type a-plane ZnO thin films on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy [J] . Ping Ding, Xinhua Pan, Jingyun Huang, Materials Letters . 2012,第期

机译：等离子体辅助分子束外延在r面蓝宝石衬底上生长p型a面ZnO薄膜
4. Growth of a-plane ZnO Thin Films on r-plane Sapphire by Plasma-assisted MBE [C] . Symposium on Progress in Semiconductor Materials - Novel Materials and Electronic and Optoelectronic Applications . 2006

机译：通过等离子体辅助MBE在R面蓝宝石上的平面ZnO薄膜的生长
5. Growth of heteroepitaxial single crystal lead magnesium niobate-lead titanate thin films on r-plane sapphire substrates. [D] . Sunder, Madhana. 2009

机译：在r面蓝宝石衬底上生长异质外延单晶铌酸铅镁钛酸铅薄膜。
6. High electron mobility and low carrier concentration of hydrothermally grown ZnO thin films on seeded a-plane sapphire at low temperature [O] . Nurul Azzyaty Jayah, Hafizal Yahaya, Mohamad Rusop Mahmood, 2015

机译：低温a晶蓝宝石上水热生长ZnO薄膜的高电子迁移率和低载流子浓度
7. Epitaxial growth of (001)-oriented Ba0.5Sr0.5TiO3 thin films on a-plane sapphire with an MgO/ZnO bridge layer [O] . Xiao Bo, Liu Hongrui, Avrutin Vitaliy, 2009

机译：具有MgO / ZnO桥接层的a面蓝宝石上（001）取向Ba0.5Sr0.5TiO3薄膜的外延生长
8. A Microstructural Comparison of the Initial Growth of AIN and GaN Layers on Basal Plane Sapphire and SiC Substrates by Low Pressure Metalorganic Chemical Vapor Depositon [R] . George, T., Pike, W. T., Khan, M. A., 1994

机译：低压金属有机化学气相沉积法研究基面蓝宝石和siC衬底上alN和GaN层初始生长的微观结构比较

Features of the Initial Growth Stages of ZnO Films on the Rhombohedral Plane of Sapphire

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