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A Microstructural Comparison of the Initial Growth of AIN and GaN Layers on Basal Plane Sapphire and SiC Substrates by Low Pressure Metalorganic Chemical Vapor Depositon

机译：低压金属有机化学气相沉积法研究基面蓝宝石和siC衬底上alN和GaN层初始生长的微观结构比较

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The initial growth by low pressure metalorganic chemical vapor deposition and subsequent thermal annealing of AIN and GaN epitaxial layers on SiC and sapphire substrates is examined using high resolution transmission electron microscopy and atomic force microscopy.

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George, T.; Pike, W. T.; Khan, M. A.; Kuznia, J. N.; Chang-Chien, P.;
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年度 1994
页码 1-24
总页数 24
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
ANNEALING; ATOMIC FORCE MICROSCOPY; EPITAXY; HIGH RESOLUTION; LOW PRESSURE; METALORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; SAPPHIRE; SUBSTRATES; THERMAL ENERGY; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; growth techniques;

机译：退火;原子力显微镜;外延;高分辨率;低压;金属有机化学气相沉积;组织;蓝宝石;的底物;热能; TRaNsmIssION ELECTRON mICROsCOpY;蒸汽;生长技术;

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1. The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition [J] . Jun Zhang, Wu Tian, Feng Wu, Applied Surface Science . 2014,第jula15期

机译：衬底氮化对金属有机化学气相沉积在r面蓝宝石上非极性a面GaN生长的影响
2. Microstructural analysis of InGaN/GaN epitaxial layers of metal organic chemical vapor deposition on c-plane of convex patterned sapphire substrate [J] . Zhixin Wan, Yinsheng He, Cheljong Choi, Thin Solid Films . 2013,第nova1期

机译：金属有机化学气相沉积在凸形图案蓝宝石衬底c面上的InGaN / GaN外延层的显微组织分析
3. Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an A1N initial layer [J] . B. Moran, F. Wu, A.E. Romanov, Journal of Crystal Growth . 2004,第1a2期

机译：使用A1N初始层在SiC衬底上通过金属有机化学气相沉积法生长的GaN的结构和形态演变
4. STRUCTURAL AND OPTICAL CHARACTERIZATION OF NON-POLAR A-PLANE GAN THIN FILMS GROWN ON R-PLANE SAPPHIRE VIA HIGH-TEMPERATURE ALN NUCLEATION LAYERS BY METALORGANIC CHEMICAL VAPOR DEPOSITION [C] . D. Lu, A. Parekh, V. Merai, Proceedings vol.2004-06; Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics and State-of-the-Art Program on Compound Semiconductors International Symposia and Meeting of the Electrochemical Society; 20041003-08; Honolulu,HI(U . 2004

机译：金属气相化学沉积法通过高温AlN成核层生长在R平面蓝宝石上的非极性A平面甘薄膜的结构和光学表征
5. Growth, doping and characterization of GaN and AlGaN deposited on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy for microelectronic applications. [D] . Bremser, Michael D. 1997

机译：微金属应用中通过金属有机气相外延生长在6H-SiC（0001）衬底上的GaN和AlGaN的生长，掺杂和表征。
6. Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate [O] . Kexiong Zhang, Hongwei Liang, Yang Liu, -1

机译：金属有机化学气相沉积在蓝宝石衬底上生长的低Al成分p-GaN / Mg掺杂Al0.25Ga0.75N / n + -GaN极化诱导的反向隧穿结
7. The Growth of AlN Single Layer on Sapphire at Low Pressure using Metalorganic Chemical Vapor Deposition (MOCVD) [O] . M.A.A.Z. Md Sahar, Z. Hassan, W.F. Lim, 2020

机译：使用金属化学气相沉积（MOCVD）在低压下在低压下的Aln单层在蓝宝石上的生长
8. Three-Dimensional Microstructural Characterization of GaN Nonplanar Substrate Laterally Epitaxially Overgrown by Metalorganic Chemical Vapor Deposition [R] . Zhou, W. , Ren, D. , Dapkus, P. D. 2005

机译：金属有机化学气相沉积法横向外延生长的GaN非平面衬底的三维微观结构表征

A Microstructural Comparison of the Initial Growth of AIN and GaN Layers on Basal Plane Sapphire and SiC Substrates by Low Pressure Metalorganic Chemical Vapor Depositon

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