...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>ACS applied materials & interfaces >Enhanced Performance of Solution-Processed Organic Thin-Film Transistors with a Low-Temperature-Annealed Alumina Interlayer between the Polyimide Gate Insulator and the Semiconductor
【24h】

Enhanced Performance of Solution-Processed Organic Thin-Film Transistors with a Low-Temperature-Annealed Alumina Interlayer between the Polyimide Gate Insulator and the Semiconductor

机译：在聚酰亚胺栅极绝缘体和半导体之间具有经过低温退火的氧化铝中间层的溶液处理有机薄膜晶体管，具有增强的性能

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We studied a low-temperature-annealed sol- gel-derived alumina interlayer between the organic semiconductor and the organic gate insulator for high-performance organic thin-film transistors. The alumina interlayer was deposited on the polyimide gate insulator by a simple spin-coating and 200 °C-annealing process. The leakage current density decreased by the interlayer deposition: at 1 MV/cm, the leakage current densities of the polyimide and the alumina/polyimide gate insulators were 7.64 X 10"' and 3.01 X 10~(-9) A/cm~2, respectively. For the first time, enhancement of the organic thin-film transistor performance by introduction of an inorganic interlayer between the organic semiconductor and the organic gate insulator was demonstrated: by introducing the interlayer, the field-effect mobility of the solution-processed organic thin-film transistor increased from 0.35 ± 0.15 to 1.35 ± 0.28 cm~2/V·s. Our results suggest that inorganic interlayer deposition could be a simple and efficient surface treatment of organic gate irisulators for enhancing the performance of solution-processed organic thin-film transistors.
机译：我们研究了用于高性能有机薄膜晶体管的有机半导体和有机栅极绝缘体之间的低温退火溶胶凝胶衍生的氧化铝中间层。通过简单的旋涂和200°C退火工艺将氧化铝夹层沉积在聚酰亚胺栅极绝缘体上。通过层间沉积降低了漏电流密度：在1 MV / cm时，聚酰亚胺和氧化铝/聚酰亚胺栅绝缘子的漏电流密度分别为7.64 X 10“'和3.01 X 10〜（-9）A / cm〜2首次展示了通过在有机半导体和有机栅绝缘体之间引入无机中间层来增强有机薄膜晶体管的性能：通过引入中间层，溶液处理的场效应迁移率有机薄膜晶体管从0.35±0.15增加到1.35±0.28 cm〜2 / V·s。我们的结果表明，无机层间沉积可以作为有机栅虹膜的简单有效表面处理，以增强溶液处理有机膜的性能。薄膜晶体管。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号