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首页> 外文期刊>ACS applied materials & interfaces >Structural, Optical, and Improved Field-Emission Properties of Tetrapod-Shaped Sn-Doped ZnO Nanostructures Synthesized via Thermal Evaporation
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Structural, Optical, and Improved Field-Emission Properties of Tetrapod-Shaped Sn-Doped ZnO Nanostructures Synthesized via Thermal Evaporation

机译:通过热蒸发合成的四脚形Sn掺杂ZnO纳米结构的结构,光学和改进的场发射特性

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摘要

High-quality tetrapod-shaped Sn-doped ZnO (T-SZO) nanostructures have been successfully synthesized via the thermal evaporation of mixed Zn and Sn powder. The effects of the Sn dopant on the morphology, microstructure, optical, and field-emission (FE) properties of T-SZO were investigated. It was found that the growth direction of the legs of T-SZO is parallel to the [0001] crystal c-axis direction and that the incorporation of Sn in the ZnO matrix increases the aspect ratio of the tetrapods, leads to blue shift in the UV region, and considerably improves the FE performance. The results also show that tetrapod cathodes with around a 0.84 atom % Sn dosage have the best FE properties, with a turn-on field of 1.95 V/μm, a current density of 950 μA/cm at a held of 4.5 V/μm, and a field-enhancement factor as high as 9556.
机译:通过混合蒸镀Zn和Sn粉末成功地合成了高质量的四脚形Sn掺杂ZnO(T-SZO)纳米结构。研究了Sn掺杂剂对T-SZO的形貌,微观结构,光学和场发射(FE)特性的影响。发现T-SZO的腿的生长方向平行于[0001]晶体的c轴方向,并且在ZnO基体中掺入Sn增加了四脚架的长宽比,从而导致四脚架的蓝移。紫外线区域,并大大改善了FE性能。结果还表明,Sn用量约为0.84原子%的四脚架阴极具有最佳的FE特性,其导通场为1.95 V /μm,保持在4.5 V /μm时的电流密度为950μA/ cm,场增强因子高达9556。

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