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首页> 外文期刊>ACS applied materials & interfaces >Chemical Conversion Synthesis of ZnS Shell on ZnO Nanowire Arrays: Morphology Evolution and Its Effect on Dye-Sensitized Solar Cell
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Chemical Conversion Synthesis of ZnS Shell on ZnO Nanowire Arrays: Morphology Evolution and Its Effect on Dye-Sensitized Solar Cell

机译：ZnO纳米线阵列上ZnS壳的化学转化合成：形态演变及其对染料敏化太阳能电池的影响

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摘要

Heterostructured ZnO/ZnS core/shell nanowire arrays have been successfully fabricated to serve as photoanode for the dye-sensitized solar cells (DSSCs) by a facile two-step approach, combining hydrothermal deposition and liquid-phase chemical conversion process. The morphology evolution of the ZnS coated on the ZnO nanowires and its effect on the performance of the DSSCs were systematically investigated by varying the reaction time during the chemical conversion process. The results show that the compact ZnS shell can effectively promote the photogenerated electrons transfer from the excited dye molecules to the conduction band of the ZnO, simultaneously suppress the recombination for the injected elelctrons from the dye and the redox electrolyte. As reaction time goes by, the surface of the nanovrires becomes coarse because of the newly formed ZnS nanoparticles, which will enhance the dye loading, resulting in increment of the short-circuit current density (J_(SC)). Open-circuit photovoltage decay measurements also show that the electron lifetime (τ_n) in the ZnO/ZnS core/shell nanostructures can be significantly prolonged because of the lower surface trap density in the ZnO after ZnS coating. For the ZnO/ZnS core/shell nanostructures, the J)(SC) and η can reach a maximum of 8.38 mA/cm~2 and 1.92% after 6 h conversion time, corresponding to 12-and 16-fold increments of as-synthesized ZnO, respectively.
机译：异质结构化的ZnO / ZnS核/壳纳米线阵列已经成功地通过两步法成功地制造出来，用作染料敏化太阳能电池（DSSC）的光阳极，结合了水热沉积和液相化学转化过程。通过改变化学转化过程中的反应时间，系统地研究了包覆在ZnO纳米线上的ZnS的形貌演变及其对DSSC性能的影响。结果表明，致密的ZnS壳层可以有效地促进光生电子从激发的染料分子转移到ZnO的导带，同时抑制染料和氧化还原电解质中注入的电子的复合。随着反应时间的流逝，由于新形成的ZnS纳米颗粒，纳米颗粒的表面变粗糙，这将增加染料的负载量，导致短路电流密度（J_（SC））增大。开路光电压衰减测量还表明，由于ZnS涂层后ZnO中较低的表面陷阱密度，ZnO / ZnS核/壳纳米结构中的电子寿命（τ_n）可以显着延长。对于ZnO / ZnS核/壳纳米结构，J）（SC）和η在6 h的转换时间后可分别达到8.38 mA / cm〜2和1.92％的最大值，分别对应于as-的12倍和16倍的增量。分别合成了ZnO。

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