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Phase Transitions of BaSi_2 at High Pressures and High Temperatures, and Electrical Properties of Quenched Metastable Phases

机译:高压和高温下Basi_2的相变,淬火亚稳态阶段的电性能

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摘要

This paper reviews structural phase transitions of BaSi_2 at high pressures and high temperatures, and electrical resistivity measurements of two quenched high-pressure, high-temperature phases and a stable phase at ambient conditions. In situ x-ray diffraction measurements reveal that BaSi_2 has three high pressure, high temperature phases: trigonal, cubic and an additional phase, at pressures up to 7 GPa and temperatures up to 1300 K. All of the high pressure, high temperature phases can be quenched at ambient conditions. The electrical resistivity measurements of trigonal, cubic and orthorhombic BaSi_2, a stable phase at ambient conditions, at 1 atm show that the electrical resistivity strongly depends on their crystal structure: orthorhombic and cubic BaSi_2 are n-type semiconductors, and trigonal BaSi_2 is a hole metal that shows superconductivity with an onset temperature of 6.8 K.
机译:本文评论了大压力和高温下Basi_2的结构相转变,以及两个淬火高压,高温相的电阻率测量和环境条件下的稳定相。 原位X射线衍射测量显示,Basi_2具有三个高压,高温阶段:Trigonal,立方和另外的阶段,在高达7GPa的压力下,温度高达1300k。所有的高压,高温阶段都可以 在环境条件下淬火。 Trigonal,立方和正交Basi_2的电阻率测量,环境条件下的稳定相位,在1个ATM中表明电阻率强烈取决于它们的晶体结构:正交和立方Basi_2是n型半导体,并且Trigonal Basi_2是孔 显示具有6.8k的起始温度的超导性的金属。

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