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首页> 外文期刊>ACS Macro Letters >Signal Enhanced FTIR Analysis of Alignment in NAFION Thin Films at SiO2 and Au Interfaces
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Signal Enhanced FTIR Analysis of Alignment in NAFION Thin Films at SiO2 and Au Interfaces

机译:SiO2和Au界面处NAFION薄膜取向的信号增强FTIR分析

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Spin-cast NAFION samples were prepared on silicon native oxide and gold substrates with film thicknesses ranging from 5 to 250 run. The influence of NAFION film thickness on the infrared spectrum of the polymer was investigated in substrate overlayer attenuated total reflection (SO-ATR) geometry at incident angles between 60 and 65. In the grazing angle SO-ATR geometry, the thickness of the film significantly affected the position and absorbance of characteristic peaks in the FTIR spectrum of NAFION. Two major peaks in the NAFION spectrum at 1220 cm(-1) (predominantly v(as)(CF2) and v(as)(SO3-)) and 1150 cm(-1) (predominantly v(as)(CF2)) appeared to systematically blueshift to 1256 and 1170 cm(-1), respectively, as the thickness of the film decreased from 250 to 5 rim. The changes in the NAFION thin film FTIR spectrum can be attributed to two factors; (1) ordering of NAFION at the interface during spin coating and film formation and (2) the increase in the p polarization character of the infrared evanescent wave as the polymer film became thinner between the internal reflection element and the film substrate overlayer. The increase in p -polarization resulted in an increase in characteristic peak absorbances of dipoles aligned normal to the substrate due to the overlayer enhancement of the electric field with NAFION films on Si or Au film substrates. These results show that the specific thin fihn sampling geometry, especially in internal reflection experiments, must be considered to rationally quantify changes in NAFION thin film infrared spectra.
机译:在硅天然氧化物和金衬底上制备旋涂NAFION样品,膜厚度范围为5到250纳米。在入射角介于60到65之间的基材上层衰减全反射(SO-ATR)几何形状中,研究了NAFION膜厚度对聚合物红外光谱的影响。在掠角SO-ATR几何形状中,膜的厚度显着影响了NAFION FTIR光谱中特征峰的位置和吸光度。 NAFION光谱中的两个主要峰分别为1220 cm(-1)(主要是v(as)(CF2)和v(as)(SO3-))和1150 cm(-1)(主要是v(as)(CF2))当薄膜的厚度从250减少到5 rim时,似乎系统地分别蓝移到1256和1170 cm(-1)。 NAFION薄膜FTIR光谱的变化可归因于两个因素。 (1)在旋涂和成膜过程中界面处的NAFION有序,以及(2)随着聚合物膜在内部反射元件和膜基材外层之间变薄,红外e逝波的p偏振特性增加。由于使用Si或Au薄膜基板上的NAFION薄膜增强了电场,p极化的增加导致垂直于基板排列的偶极子的特征峰吸收值增加。这些结果表明,必须考虑特定的薄膜采样几何形状,尤其是在内部反射实验中,才能合理地量化NAFION薄膜红外光谱的变化。

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