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Development of GaN semiconductor

机译：development of Gan semiconductor

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Highly efficient white-light-emitting diodes (LEDs) fabricated from red-green-blue phosphors and ultraviolet (UV) LEDs are expected to be superior to those fabricated from yellow phosphors and blue LEDs as light sources for illumination, on the basis of their color rendering properties. However, UV LEDs are more sensitive to dislocations in the epitaxial layer than blue LEDs. To improve the emitting efficiency of UV LEDs, the relationship between the photo-luminescence (PL) wavelength of the active layer for LEDs and the PL intensity was investigated. The PL intensity is reduced when the PL wavelength becomes short. This indicates that the emitting efficiency of UV LEDs is sensitive to dislocations in the epitaxial layer. Therefore, the relationship between dislocation density and PL intensity was investigated. An increase of the PL intensity was observed with a reduction in dislocation density. These results indicate that the reduction of dislocation density is effective for increasing the efficiency of UV LEDs. The epitaxially lateral overgrowth (FLO) technique was carried out to reduce the threading dislocation density. Using the FLO technique, the number of threading dislocations was reduced by approximately two orders of magnitude. Therefore, it is considered that high-efficiency UV LEDs can be fabricated using the ELO technique.
机译：从红色绿色蓝色磷光体和紫外线（UV）LED制造的高效的白光发光二极管（LED）预计将优于由黄色磷光体和蓝色LED制造的那些作为照明的光源，以便在其基础上颜色渲染属性。然而，UV LED对外延层中的位错比蓝色LED更敏感。为了提高UV LED的发光效率，研究了LED和PL强度的有源层的光发光（PL）波长之间的关系。当PL波长变短时，PL强度降低。这表明UV LED的发光效率对外延层中的位错敏感。因此，研究了位错密度与PL强度之间的关系。观察到PL强度的增加，随着位错密度的降低。这些结果表明，位错密度的降低是提高UV LED效率的有效性。进行外延横向过度生长（FLO）技术以降低螺纹位错密度。使用FLO技术，螺纹脱位的数量减小了大约两个数量级。因此，认为可以使用ELO技术制造高效UV LED。

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