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首页> 外文期刊>CERAMICS INTERNATIONAL >The upper Manganese doping limit and its effects on physical properties of lead-free Bi0.5Na0.5TiO3 ceramics
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The upper Manganese doping limit and its effects on physical properties of lead-free Bi0.5Na0.5TiO3 ceramics

机译：上锰掺杂极限及其对无铅BI0.5N0.5TiO3陶瓷物理性质的影响

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摘要

The lead-free piezoelectric, Bi0.5Na0.5TiO3, was synthesized with varying amounts of Manganese (Mn) doping (x = 0.00, 0.02, 0.05, 0.10, 0.15) on the B-site to replace Ti4+ cations. Herein, the doping limit of Mn is explored along with its effects on the structure and properties of these materials. The temperature-dependent dielectric properties of the materials with a higher manganese doping level have also been comprehensively investigated in the temperature range of 10-700 K. All samples show a high dielectric permittivity, epsilon(r) similar to 4979-3626 at T-m similar to 550-600 K, along with a low dielectric loss. The magnetic study shows that doping with Mn leads to a complex magnetic state, where there is possible clustering of Mn ions, with inter- or intra-cluster interactions becoming dominant at approximately 50 K. These samples may be considered as alternative to lead-free materials with magneto-electric coupling.
机译：通过不同量的锰（Mn）掺杂（X = 0.00,0.02,0.05,0.10,0.15）在B型末端合成无铅压电，Bi0.5Na0.5TiO3以替代Ti4 +阳离子。 这里，探索Mn的掺杂极限以及其对这些材料的结构和性质的影响。 在10-700k的温度范围内，还全面研究了具有较高锰掺杂水平的材料的温度依赖性介电性能。所有样品都显示出高介电常数，ε（R）类似于TM的4979-3626 到550-600 k，以及低介电损耗。 磁性研究表明，用Mn掺杂导致复杂的磁性状态，其中Mn离子可能的聚类，其中簇间相互作用在大约50k下变得显着。这些样品可以被认为是无铅的替代 具有磁电耦合的材料。

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