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首页> 外文期刊>Chemistry: A European journal >Dual-Functional Surfactant-Templated Strategy for Synthesis of an In Situ N_2-Intercalated Mesoporous WO_3 Photoanode for Efficient Visible-Light-Driven Water Oxidation
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Dual-Functional Surfactant-Templated Strategy for Synthesis of an In Situ N_2-Intercalated Mesoporous WO_3 Photoanode for Efficient Visible-Light-Driven Water Oxidation

机译：用于合成原位N_2嵌入的中孔WO_3光电氧化的双功能表面活性剂 - 模板策略

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摘要

N_2-Intercalated crystalline mesoporous tungsten trioxide (WO_3) was synthesized by a thermal decomposition technique with dodecylamine (DDA) as a surfactant template with a dual role as an N-atom source for N_2 intercalation, alongside its conventional structure-directing role (by micelle formation) to induce a mesoporous structure. N_2 physisorption analysis showed that the specific surface area (57.3 m~2g~(-1)) of WO_3 templated with DDA (WO_3-DDA) is 2.3 times higher than that of 24.5 m~2g~(-1) for WO_3 prepared without DDA (WO_3-bulk), due to the mesoporous structure of WO_3-DDA. The Raman and X-ray photoelectron spectra of WO_3-DDA indicated intercalation of N_2 into the WO_3 lattice above 450 8C. The UV/Vis diffuse-reflectance spectra exhibited a significant shift of the absorption edge by 28 nm, from 459 nm (2.70 eV) to 487 nm (2.54 eV), due to N_2 intercalation. This could be explained by the bandgap narrowing of WO_3-DDA by formation of a new intermediate N 2p orbital between the conduction and valance bands of WO_3. A WO_3- DDA-coated indium tin oxide (ITO) electrode calcined at 450 8C generated a photoanodic current under visible-light irradiation below 490 nm due to photoelectrochemical water oxidation, as opposed to below 470 nm for ITO/WO_3- bulk. The incident photon-to-current conversion efficiency (IPCE=24.5%) at 420 nm and 0.5V versus Ag/AgCl was higher than that of 2.5% for ITO/WO_3-bulk by one order of magnitude due to N_2 intercalation and the mesoporous structure of WO_3-DDA.
机译：通过用十二烷基胺（DDA）的热分解技术合成了二氧化二锌（WO_3）作为表面活性剂模板合成，作为N形插入的N-Atorom源，以及其常规的结构 - 指导作用（通过胶束）形成）诱导中孔结构。 N_2理由分析表明，对于DDA（WO_3-DDA）的WO_3模板的比表面积（57.3m〜2g〜（-1））比没有的24.5 m〜2g〜（-1）的2.3倍。没有DDA（WO_3-BOLK），由于WO_3-DDA的介孔结构。 WO_3-DDA的拉曼和X射线光电子能谱表明N_2的插入到450 8C以上的WO_3格中。 UV / Vis漫反射率光谱由于N_2嵌入而从459nm（2.70eV）至487nm（2.54eV）的459nm（2.70eV）上表现出显着的吸收边缘。这可以通过在WO_3的导通和衡值之间形成新的中间N 2P轨道来解释WO_3-DDA的带隙变窄。在450 8℃下煅烧的WO_3-DDA涂覆的氧化铟锡（ITO）电极在490nm以下的可见光照射下产生光秃秃的电流，由于光电化学水氧化，而ITO / WO_3-体积低于470nm。由于N_2嵌入和中孔，420nm和0.5V与Ag / AgCl的ITO / WO_3-散列的入射光介电流转换效率（IPCE = 24.5％）高于ITO / WO_3-体积的2.5％。 WO_3-DDA的结构。

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  • 来源
    《Chemistry: A European journal》 |2017年第27期|共9页
  • 作者

    Dong Li; Debraj Chandra; Ryouchi Takeuchi; Takanari Togashi; Masato Kurihara; Kenji Saito; Tatsuto Yui; Masayuki Yagi;

  • 作者单位

    Department of Materials Science and Technology Faculty of Engineering Niigata University 8050 Ikarashi-2 Niigata 950-2181 (Japan) Fax: (+81) 25-262-6790;

    Department of Materials Science and Technology Faculty of Engineering Niigata University 8050 Ikarashi-2 Niigata 950-2181 (Japan) Fax: (+81) 25-262-6790;

    Department of Materials Science and Technology Faculty of Engineering Niigata University 8050 Ikarashi-2 Niigata 950-2181 (Japan) Fax: (+81) 25-262-6790;

    Department of Material and Biological Chemistry Faculty of Science Yamagata University 1-4-12 Kojirakawa-machi Yamagata 990-8560 (Japan);

    Department of Material and Biological Chemistry Faculty of Science Yamagata University 1-4-12 Kojirakawa-machi Yamagata 990-8560 (Japan);

    Department of Materials Science and Technology Faculty of Engineering Niigata University 8050 Ikarashi-2 Niigata 950-2181 (Japan) Fax: (+81) 25-262-6790;

    Department of Materials Science and Technology Faculty of Engineering Niigata University 8050 Ikarashi-2 Niigata 950-2181 (Japan) Fax: (+81) 25-262-6790;

    Department of Materials Science and Technology Faculty of Engineering Niigata University 8050 Ikarashi-2 Niigata 950-2181 (Japan) Fax: (+81) 25-262-6790;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用化学;
  • 关键词

    intercalations; mesoporous materials; template synthesis; tungsten; water splitting;

    机译：嵌入;中孔材料;模板合成;钨;水分裂;

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