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首页> 外文期刊>Carbon: An International Journal Sponsored by the American Carbon Society >Room-temperature photoconduction assisted by hot-carriers in graphene for sub-terahertz detection
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Room-temperature photoconduction assisted by hot-carriers in graphene for sub-terahertz detection

机译：房间温度光电发生器通过石墨烯的热载体辅助，用于亚太赫兹检测

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摘要

The terahertz (THz) technique is still confronted with challenges partly due to lack of an efficient method to achieve sensitive detection at room temperature. Gapless graphene is highly sought-after as a potential candidate for active material in photo-detection across the whole electromagnetic spectrum. However, the efficient photo-to-electric conversions within THz range are not well-developed at present. Here we report the hot carrier-assisted photoconduction being triggered by a sub-THz electromagnetic wave in homogeneous graphene, which is beyond the conventional interband mechanism and can be potentially extended to the higher THz band. The photoconductive effect here is attributed to the additional carriers replenished from the electrode following the potential disturbance of the hot carrier diffusion, which depletes or increases the sheet density in the channel depending on the carrier-polarity in the channel. The biased photoconductive device shows sensitivity over 400 V/W (4 x 10(3) V/W) at room temperature and noise-equivalent power less than 0.5 nW/Hz(0.5) (20 pW/Hz(0.5)) in reference to the incident (absorbed) power. The reported figures of merit represent the benchmark for further performance improvement via several different methods such as shortening the channel, using a matched antenna or material with improved mobility. All results presented open up the feasibility of achieving a photoconductive device for sensitive room temperature detection at terahertz frequencies. (c) 2018 Elsevier Ltd. All rights reserved.
机译：由于缺乏在室温下实现敏感检测的方法，Terahertz（Thz）技术仍然面临挑战。在整个电磁光谱上，高度追捧无效石墨烯作为光检测中的活性材料的潜在候选者。然而，目前THz范围内的有效的光电转换不是很好的。在这里，我们报告了由均质石墨烯中的亚THz电磁波触发的热载体辅助光电台，其超出了传统的间带机构，并且可以潜在地扩展到较高的THz波段。这里的光电导效应归因于在热载体扩散的潜在干扰之后从电极补充的附加载体，其根据通道中的载体极性耗尽或增加信道中的纸张密度。偏置的光电导器显示在室温下超过400V / W（4×10（3）V / W）的敏感性，噪声等效功率小于0.5 nW / Hz（0.5）（20pw / Hz（0.5））到事件（吸收）的力量。据报道的优点图代表了通过几种不同方法进一步改进的基准，例如缩短通道，使用匹配的天线或具有改进的移动性的材料。所有结果都提出了在太赫兹频率下实现了实现光电导装置的可行性，以便在太赫兹频率下进行敏感室温检测。 （c）2018年elestvier有限公司保留所有权利。

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  • 作者

    Liu Changlong; Wang Lin; Chen Xiaoshuang; Zhou Jing; Hu Weida; Wang Xinran; Li Jinhua; Huang Zhiming; Zhou Wei; Tang Weiwei; Xu Gangyi; Wang Shao-Wei; Lu Wei;

  • 作者单位

    Chinese Acad Sci Shanghai Inst Tech Phys State Key Lab Infrared Phys 500 Yutian Rd Shanghai 200083 Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys State Key Lab Infrared Phys 500 Yutian Rd Shanghai 200083 Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys State Key Lab Infrared Phys 500 Yutian Rd Shanghai 200083 Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys State Key Lab Infrared Phys 500 Yutian Rd Shanghai 200083 Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys State Key Lab Infrared Phys 500 Yutian Rd Shanghai 200083 Peoples R China;

    Nanjing Univ Sch Elect Sci &

    Engn Collaborat Innovat Ctr Adv Microstruct Natl Lab Solid State Microstruct Nanjing 210093 Jiangsu Peoples R China;

    Hubei Univ Sch Mat Sci &

    Engn Hubei Collaborat Innovat Ctr Adv Organ Chem Mat Key Lab Green Preparat &

    Applicat Funct Mat Minis Wuhan 430062 Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys State Key Lab Infrared Phys 500 Yutian Rd Shanghai 200083 Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys State Key Lab Infrared Phys 500 Yutian Rd Shanghai 200083 Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys State Key Lab Infrared Phys 500 Yutian Rd Shanghai 200083 Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys State Key Lab Infrared Phys 500 Yutian Rd Shanghai 200083 Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys State Key Lab Infrared Phys 500 Yutian Rd Shanghai 200083 Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys State Key Lab Infrared Phys 500 Yutian Rd Shanghai 200083 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 非金属元素及其无机化合物化学工业;化学;非金属材料;第Ⅳ族非金属元素及其无机化合物;
  • 关键词

    2D materials; Graphene; Terahertz; Photodetector; Hot carriers-induced;

    机译：2D材料;石墨烯;太赫兹;光电探测器;热载体诱导;

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