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首页> 外文期刊>Crystal growth & design >Synthesis of Bi2Te3 Single Crystals with Lateral Size up to Tens of Micrometers by Vapor Transport and Its Potential for Thermoelectric Applications
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Synthesis of Bi2Te3 Single Crystals with Lateral Size up to Tens of Micrometers by Vapor Transport and Its Potential for Thermoelectric Applications

机译：通过蒸汽传输的横向尺寸合成横向尺寸高达数十微米的单晶体及其对热电应用的电位

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摘要

Bismuth telluride (Bi2Te3) has recently attracted significant attention owing to its unique physical properties as a three-dimensional topological insulator and excellent properties as a thermoelectric material. Meanwhile, it is important to develop a synthesis process yielding high-quality single crystals over a large area to study the inherent physical properties and device applications of two-dimensional materials. However, the maturity of Bi2Te3 vapor-phase synthesis is not good, compared to those of other semiconductor two-dimensional crystals. In this study, therefore, we report the synthesis of relatively large-area Bi2Te3 crystals by vapor transport method, and we investigated the key process parameters for a synthesis of relatively thin and large-area Bi2Te3 crystals. The most important factor determining the crystal synthesis was the temperature of the substrate. A Bi2Te3 device exhibited a considerable photocurrent when the laser was irradiated inside the electrode area. This indicated that the photo-thermoelectric effect was the main mechanism of generation of photocurrent. The estimated Seebeck coefficient of the device was similar to 1.96 mu V/K, which is comparable to the previously reported high Seebeck coefficient of Bi2Te3. This synthesis method can guide the development and applications of various types of layered crystals with the space group of R (3) over barm.
机译：碲化铋（Bi2te3）最近由于其独特的物理性能作为三维拓扑绝缘体和作为热电材料的优异性能而引起了显着的关注。同时，在大面积上产生高质量单晶的合成过程是重要的，以研究二维材料的固有物理性质和装置应用。然而，与其他半导体二维晶体的那些相比，Bi2Te3气相合成的成熟不良好。因此，在这项研究中，我们通过蒸汽传输方法报告了相对大区域Bi2Te3晶体的合成，并研究了合成相对薄的大面积Bi2Te3晶体的关键过程参数。确定晶体合成的最重要因素是基材的温度。当激光照射在电极区域内时，Bi2Te3器件表现出相当大的光电流。这表明光热电效应是光电流产生的主要机制。该装置的估计塞贝克系数类似于1.96μV/ k，其与先前报道的Bi2te3的高焦点系数相当。该合成方法可以指导各种类型的分层晶体的开发和应用，其在BARM上具有R（3）的空间组。

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  • 来源
    《Crystal growth & design》 |2019年第4期|共6页
  • 作者

    Hyun Cheol-Min; Choi Jeong-Hun; Lee Seung Won; Seo Seung-Young; Lee Myoung-Jae; Kwon Se-Hun; Ahn Ji-Hoon;

  • 作者单位

    Korea Maritime &

    Ocean Univ Dept Elect Mat Engn 727 Taejong Ro Busan 49112 South Korea;

    Korea Maritime &

    Ocean Univ Dept Elect Mat Engn 727 Taejong Ro Busan 49112 South Korea;

    Korea Maritime &

    Ocean Univ Dept Elect Mat Engn 727 Taejong Ro Busan 49112 South Korea;

    Pohang Univ Sci &

    Technol Dept Mat Sci &

    Engn 77 Cheongam Ro Pohang 790784 South Korea;

    Daegu Gyeongbuk Inst Sci &

    Technol Intelligent Devices &

    Syst Res Grp 333 Techno Jungang Daero Daegu 42988 South Korea;

    Pusan Natl Univ Sch Mat Sci &

    Engn 30 Jangjeon Dong Geumjeong Gu Busan 609735 South Korea;

    Korea Maritime &

    Ocean Univ Dept Elect Mat Engn 727 Taejong Ro Busan 49112 South Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 晶体学;
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