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首页> 外文期刊>Crystal growth & design >Growth Study of New Complex Oxide PbOxSe1-x Thin Films by Oxygen Plasma-Assisted Molecular Beam Epitaxy
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Growth Study of New Complex Oxide PbOxSe1-x Thin Films by Oxygen Plasma-Assisted Molecular Beam Epitaxy

机译：氧等离子体辅助分子束外延的新型复合氧化物PboxSe1-X薄膜的生长研究

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摘要

In this work, we introduce the growth of a new complex oxide lead oxy-chalcogenide (PbOxSe1-x) thin film using an oxygen plasma-assisted molecular beam epitaxy method. Freshly cleaved BaF2(111) wafers were used as the substrates for this growth study. Systematic characterization of X-ray diffraction peaks, Raman shifts, absorption spectra, scanning electron microscopic imaging, and Hall measurements were conducted to elucidate the structural, optical, and electric properties of the as-grown PbOxSe1-x thin films. Specifically, X-ray diffraction measurements revealed that PbOxSe1-x films maintained the same rock-salt crystal structure as the PbSe semiconductor, but a slight shift in the lattice parameter was observed. A blue shift in the optical absorption edge also suggests that the inclusion of oxygen atoms led to the formation of a ternary compound crystal structure. Furthermore, all PbOxSe1-x thin films were observed to be polycrystalline in nature and displayed preferred [100] orientated grains. Slight variations in LO and TO phonon peak positions were also observed under Raman spectroscopy, signifying the presence of lead-oxygen bonding. This new type of complex oxide thin film has never been reported and could potentially be used to develop advanced optoelectronic devices, including mid-infrared photodetectors and light-emitting devices.
机译：在这项工作中，我们使用氧等离子体辅助分子束外延方法介绍新的复合氧化物铅氧化物（PboxSe1-X）薄膜的生长。新近地切割的BAF2（111）晶片用作该生长研究的基材。进行了系统表征X射线衍射峰，拉曼移位，吸收光谱，扫描电子显微镜成像和霍尔测量以阐明生长的pboxSe1-X薄膜的结构，光学和电性能。具体地，X射线衍射测量显示，PboxSe1-X膜保持与PBSE半导体相同的岩盐晶体结构，但观察到晶格参数的轻微偏移。光学吸收边缘中的蓝色偏移还表明包含氧原子导致三元化合物晶体结构的形成。此外，观察到所有pBoxSe1-X薄膜的性质是多晶，并且显示优选的[100]取向晶粒。在拉曼光谱下也观察到LO和峰值位置的轻微变化，意味着铅氧粘合的存在。这种新型的复杂氧化物薄膜从未报道并且可能用于开发先进的光电器件，包括中红外光电探测器和发光器件。

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  • 来源
    《Crystal growth & design》 |2019年第4期|共6页
  • 作者

    McDowell Lance L.; Qiu Jijun; Weng Binbin; Shi Zhisheng;

  • 作者单位

    Univ Oklahoma Sch Elect &

    Comp Engn Norman OK 73019 USA;

    Univ Oklahoma Sch Elect &

    Comp Engn Norman OK 73019 USA;

    Univ Oklahoma Sch Elect &

    Comp Engn Norman OK 73019 USA;

    Univ Oklahoma Sch Elect &

    Comp Engn Norman OK 73019 USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 晶体学;
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