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首页> 外文期刊>Crystal growth & design >Observation of Anisotropic Growth and Compositional Discontinuity in AlGaN Electron-Blocking Layers on GaN Microrods
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Observation of Anisotropic Growth and Compositional Discontinuity in AlGaN Electron-Blocking Layers on GaN Microrods

机译：GaN Microrods中AlGaN电子阻滞层各向异性生长和组成不连续的观察

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摘要

In GaN microrods, phase separation of the AlGaN electron-blocking layer is an enormous obstacle for achieving high-efficiency light-emitting diodes, as this phenomenon negatively affects the device efficiency by inducing unwanted band-energy modulations. Here, we found that the AlGaN electron-blocking layer on each m -plane of the GaN microrod appears to be phase separated, and each electron-blocking layer has a different thickness and length. Our careful analysis based on atom probe tomography reveals that the Al distribution in AlGaN is not uniform and that Al-rich and Al-deficient regions are clearly present. In addition, the longer surface diffusion length of Ga adatoms, as compared to Al adatoms, and the different initial strain state of each m -plane in the GaN rods are deeply associated with the different growth rates and inhomogeneous Al composition of AlGaN, resulting in phase separation of the AlGaN electron-blocking layer. These atomic-scale observations in the structural and chemical composition of AlGaN grown on GaN microrods could provide expanded opportunities for building a wide range of high-quality AlGaN electron-blocking layers.
机译：在GaN Microrods中，AlGaN电子阻挡层的相分离是实现高效发光二极管的巨大障碍，因为这种现象通过诱导不希望的带能调制而产生效率。这里，我们发现GaN Microrod的每个mplane上的AlGaN电子阻挡层似乎是相分离的，并且每个电子阻挡层具有不同的厚度和长度。我们基于原子探测断层扫描的仔细分析表明，AlGaN中的Al分布不均匀，并且清楚地存在富含族和缺乏的区域。另外，与Al Adatoms相比，Ga Adatoms的较长表面扩散长度和GaN棒中的每平方中的每个M普烷的不同初始菌株状态深深与AlGaN的不同生长速率和非均均Al组成相关，导致AlGaN电子阻挡层的相分离。在GaN Microrods上生长的AlGaN结构和化学成分中的这些原子标度观察可以为建立广泛的高质量AlGaN电子阻挡层提供扩展的机会。

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  • 来源
    《Crystal growth & design》 |2018年第3期|共5页
  • 作者

    Woo-Young Jung; Chan-Min Kwak; Jae-Bok Seol; Jin Kuen Park; Chan-Gyung Park; Young Kyu Jeong;

  • 作者单位

    Department of Materials Science and Engineering POSTECH Pohang 37673 South Korea;

    Department of Materials Science and Engineering POSTECH Pohang 37673 South Korea;

    National Institute for Nanomaterials Technology POSTECH Pohang 37673 South Korea;

    Department of Chemistry Hankuk University of Foreign Studies Yongin 449-791 South Korea;

    Department of Materials Science and Engineering POSTECH Pohang 37673 South Korea;

    Non-Ferrous Materials Group KITECH Gangneung 25440 South Korea;

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  • 正文语种 eng
  • 中图分类 晶体学;
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